Influence of the nanometer thick interface layer to electrical properties of the 10 nm doped metal oxide high k dielectrics

Abstract

The 2 nm interface films formed between the 10 nm thin Hf- and Zr-doped tantalum oxide high k films and Si wafer were studied. Physical and chemical properties of the interface layer were investigated with respect to the bulk film preparation conditions. The interface layer properties do not influence the high k film's leakage current but affect the dielectric constant drastically.