基于单C/sub - 60/分子晶体管的模拟电路单元模型

Y. Wang, J. Jiang, Q. Cai
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引用次数: 0

摘要

本文在单C/sub - 60/晶体管纳米力学振荡实验的启发下,利用改进的库仑阻断纳米结构中电荷传递的穿梭机制,结合电阻和弹簧,给出了基于OD C/sub - 60/晶体管的新模型,并模拟了发现库仑阻断和库仑阶梯的I-V/sub - ds/和发现周期性衰减现象的I-V/sub - g/特性。并在此晶体管机理模型的基础上,建立了具有电阻负载的放大器的新模型,并给出了新的小信号等效电路模型。这里我们用三态模型求解主方程,因为它简单且精度较高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analog circuit cell model based on single C/sub 60/ molecular transistor
In this paper, in the enlightenment of nanomechanical oscillations' experiment in single-C/sub 60/ transistor, utilizing improved shuttle mechanism for charge transfer in Coulomb blockade nanostructures, we give a new model of transistor based OD C/sub 60/ by combining the resistance with the spring, and simulate the I-V/sub ds/, where we find the Coulomb blockade and Coulomb staircase, and I-V/sub g/ characteristics, where we find periodical attenuation phenomenon. And on the basis of this transistor mechanism model, we construct a new model of an amplifier with the resistant load, and give the new small-signal equivalent circuit model. Here we solve master equation with the three-state model because of its simplicity and higher precision.
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