{"title":"纳米氧化钨薄膜的光电特性","authors":"A. Jayatissa, S. Cheng","doi":"10.1109/NANO.2002.1032115","DOIUrl":null,"url":null,"abstract":"Tungsten oxide (WO/sub 3/) is an important electronic material investigated for solid state sensors, electrochromic and optoelectronic devices. In this study, optoelectronic properties of nanocrystalline WO/sub 3/ thin films, prepared by vacuum evaporation followed by thermal annealing were investigated. The structural and optoelectronic properties were measured for systematically annealed samples in 100-600/spl deg/C range. It was found that the optical transmittance and electrical conductivity were varied in 10-80% range and 10/sup -3/- 10/sup -8/ (/spl Omega/.cm)/sup -1/ range, respectively, by change of annealing temperature. Study of surface and structural properties reveals that pronounced effect on properties can be made by annealing even at 100/spl deg/C. Results indicated that the properties Of WO/sub 3/ can be tuned by annealing process because of change of crystallinity from amorphous to nanomonocrystalline to polycrystalline structures.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"142 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Optoelectronic properties of nanocrystalline tungsten oxide thin films\",\"authors\":\"A. Jayatissa, S. Cheng\",\"doi\":\"10.1109/NANO.2002.1032115\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Tungsten oxide (WO/sub 3/) is an important electronic material investigated for solid state sensors, electrochromic and optoelectronic devices. In this study, optoelectronic properties of nanocrystalline WO/sub 3/ thin films, prepared by vacuum evaporation followed by thermal annealing were investigated. The structural and optoelectronic properties were measured for systematically annealed samples in 100-600/spl deg/C range. It was found that the optical transmittance and electrical conductivity were varied in 10-80% range and 10/sup -3/- 10/sup -8/ (/spl Omega/.cm)/sup -1/ range, respectively, by change of annealing temperature. Study of surface and structural properties reveals that pronounced effect on properties can be made by annealing even at 100/spl deg/C. Results indicated that the properties Of WO/sub 3/ can be tuned by annealing process because of change of crystallinity from amorphous to nanomonocrystalline to polycrystalline structures.\",\"PeriodicalId\":408575,\"journal\":{\"name\":\"Proceedings of the 2nd IEEE Conference on Nanotechnology\",\"volume\":\"142 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2nd IEEE Conference on Nanotechnology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2002.1032115\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd IEEE Conference on Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2002.1032115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optoelectronic properties of nanocrystalline tungsten oxide thin films
Tungsten oxide (WO/sub 3/) is an important electronic material investigated for solid state sensors, electrochromic and optoelectronic devices. In this study, optoelectronic properties of nanocrystalline WO/sub 3/ thin films, prepared by vacuum evaporation followed by thermal annealing were investigated. The structural and optoelectronic properties were measured for systematically annealed samples in 100-600/spl deg/C range. It was found that the optical transmittance and electrical conductivity were varied in 10-80% range and 10/sup -3/- 10/sup -8/ (/spl Omega/.cm)/sup -1/ range, respectively, by change of annealing temperature. Study of surface and structural properties reveals that pronounced effect on properties can be made by annealing even at 100/spl deg/C. Results indicated that the properties Of WO/sub 3/ can be tuned by annealing process because of change of crystallinity from amorphous to nanomonocrystalline to polycrystalline structures.
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