Horng-Chih Lin, Meng-Fan Wang, F. Hou, Jan-Tsai Liu, Yiming Li, Tiao-Yuan Huang, S. Sze
{"title":"子栅偏压对具有纳米沟道的肖特基势垒SOI mosfet工作的影响","authors":"Horng-Chih Lin, Meng-Fan Wang, F. Hou, Jan-Tsai Liu, Yiming Li, Tiao-Yuan Huang, S. Sze","doi":"10.1109/NANO.2002.1032226","DOIUrl":null,"url":null,"abstract":"The characteristics of a novel nano-scale silicon-on-insulator (SOI) device featuring silicide Schottky source/drain and field-induced S/D extensions induced by a sub-gate were investigated. The new device exhibits unique and high-performance bi-channel operation capability. In this work, particular attention was paid to the effects of subgate bias on the device operation. It is shown that the applied sub-gate voltage not only increases the on-state current, but also effectively suppresses the off-state leakage. Extremely high on/off current ratio (>10/sup 9/) has thus been obtained. Dependences of sub-gate bias on sub-threshold swing and threshold-voltage roll-off characteristics were also explored.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Effects of sub-gate bias on the operation of Schottky-barrier SOI MOSFETs having nano-scale channel\",\"authors\":\"Horng-Chih Lin, Meng-Fan Wang, F. Hou, Jan-Tsai Liu, Yiming Li, Tiao-Yuan Huang, S. Sze\",\"doi\":\"10.1109/NANO.2002.1032226\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The characteristics of a novel nano-scale silicon-on-insulator (SOI) device featuring silicide Schottky source/drain and field-induced S/D extensions induced by a sub-gate were investigated. The new device exhibits unique and high-performance bi-channel operation capability. In this work, particular attention was paid to the effects of subgate bias on the device operation. It is shown that the applied sub-gate voltage not only increases the on-state current, but also effectively suppresses the off-state leakage. Extremely high on/off current ratio (>10/sup 9/) has thus been obtained. Dependences of sub-gate bias on sub-threshold swing and threshold-voltage roll-off characteristics were also explored.\",\"PeriodicalId\":408575,\"journal\":{\"name\":\"Proceedings of the 2nd IEEE Conference on Nanotechnology\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2nd IEEE Conference on Nanotechnology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2002.1032226\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd IEEE Conference on Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2002.1032226","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of sub-gate bias on the operation of Schottky-barrier SOI MOSFETs having nano-scale channel
The characteristics of a novel nano-scale silicon-on-insulator (SOI) device featuring silicide Schottky source/drain and field-induced S/D extensions induced by a sub-gate were investigated. The new device exhibits unique and high-performance bi-channel operation capability. In this work, particular attention was paid to the effects of subgate bias on the device operation. It is shown that the applied sub-gate voltage not only increases the on-state current, but also effectively suppresses the off-state leakage. Extremely high on/off current ratio (>10/sup 9/) has thus been obtained. Dependences of sub-gate bias on sub-threshold swing and threshold-voltage roll-off characteristics were also explored.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
