R. Rendell, M. Ancona, W. Kruppa, E. Foos, A. W. Snow, D. Park, J. B. Boos
{"title":"Effect of network topology on nanocluster film transport","authors":"R. Rendell, M. Ancona, W. Kruppa, E. Foos, A. W. Snow, D. Park, J. B. Boos","doi":"10.1109/NANO.2002.1032237","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032237","url":null,"abstract":"The effects of network topology on electron transport is studied using Monte Carlo simulations of tunnel junction networks with transport governed by Coulomb blockade. Both the threshold voltage shift and the nonlinearity of the I-V curves are sensitive to lateral fluctuations of the conduction paths due to random voids. The nonlinearity is found to be maximized for aspect ratios of the network of unity or larger and for random void networks with 50% horizontal connections. Comparisons are made with Au nanocluster I-V measurements.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"284 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120878002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Piconewton regime measurements of biomolecular interactions by nanomechanical force gauge","authors":"K. Jeong, M. Pio, C. Keller, L. Lee","doi":"10.1109/NANO.2002.1032149","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032149","url":null,"abstract":"A piconewton regime measurement of biomolecular interactions in an aqueous solution by a novel nanomechanical force gauge (NFG) is presented in this paper. A highly sensitive nanoscale cantilever with a spring constant, which is thousand times smaller than that of an atomic force microscope (AFM) microcantilever, is fabricated by a batch process. The NFG has a capability of direct reading without any optical amplification. The control of nanoscale thickness of a single crystal silicon cantilever is done by a thermal oxidation process. The deflection of the cantilever, corresponding to piconewtons is directly measured by reading the tick movements in the reading scale of the NFG under the microscope. The spring constant of the NFG is calculated by identifying the natural frequency using electrostatic force excitation, and the minimum value of the designed device was 78.6 pN//spl mu/m. As an example of the biomolecular applications, the dissociation between a biotinylated bead and avidins is measured, and the mean is 636 pN. The NFG has the potential of 1 pN//spl mu/m sensitivity through the nanofabrication technology as well as serving as an inexpensive and powerful substitute for an atomic force microscope in studying biomolecular interactions.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"2016 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125728739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Applications of nanoimprinting technique in photonic devices","authors":"L.J. Guo, C. Chao, X. Cheng, Y. Hong, J. Kanicki","doi":"10.1109/NANO.2002.1032111","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032111","url":null,"abstract":"Nanoimprinting is an emerging nanolithography technique, which not only has the ability to pattern nanoscale features, but also is compatible with polymer material processing. Based on these characteristics, we have extended nanoimprinting to two new applications in polymer based photonic and optoelectronic devices, namely polymer microring waveguide device and pixelated polymer light emitting diodes. Fabrication details for both types of devices are described.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132929667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Techniques and methods for the simulation of nanoscale ballistic MOSFETs","authors":"G. Iannaccone, G. Fiori, G. Curatola","doi":"10.1109/NANO.2002.1032223","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032223","url":null,"abstract":"In this paper, we present the methods and the techniques we use for performing the simulation of nanoscale ballistic MOSFETs in bulk silicon, silicon on insulator, and silicon-germanium. Results for typical structures with channel length of 25 nm are presented.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"12 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113979386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Towards the design of programmable self-assembled DNA-carbon nanotubes: an approach to nanobiotronics","authors":"J. Seminario, L. A. Agapito, H. Figueroa","doi":"10.1109/NANO.2002.1032248","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032248","url":null,"abstract":"Recently, bioelectronics has become a unique fusion of ideas leading to the development of new bio-devices, which electrically interface biological compounds such as proteins, lipids, and DNAs with electronic transducers. The major developments in this research field are biosensors and biomaterials. In addition, recent trends in interdisciplinary studies in chemistry, biology and electronics have led to a new field of research: biomolecular electronics. This promising scientific field is part of a more general approach, molecular electronics, which aims to the development of new electronic technologies, and will overcome the problem of downscaling silicon CMOS electronics faces, having the long-term goal of building a molecular computer with highly reduced feature sizes, higher performance and increased information processing capabilities. In this preliminary work, we propose a new approach for the realization of a programmable bio-molecular units that will take advantage of the self-assembly and selectivity properties of DNA molecules and the versatility of carbon nanotubes (CNT) to build scalable computing systems that will prove the feasibility of the biomolecular computer.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114931043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Konle, H. Presting, U. Konig, V. Starkov, A. Vyatkin
{"title":"Nano-sized pore formation in p-type silicon for automotive applications","authors":"J. Konle, H. Presting, U. Konig, V. Starkov, A. Vyatkin","doi":"10.1109/NANO.2002.1032288","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032288","url":null,"abstract":"Self-organized electrochemical etching of p-type silicon (Si) has been used to study random micropore formation which produces porous Si structures with nanometer well thickness. The density of micropores, i.e. the porosity, can be varied in a wide range by choice of the substrate doping level. Surface enlargement up to a factor of 10000 and more can be easily achieved by choice of appropriate conditions in the anodic etch process. In addition, we demonstrate deep anodic etching (DAE) of a pinhole array in Si by lithographic pre-patterning and subsequent etch using potassium hydroxide (KOH). The Si wafer is then anodically etched which produces deep channels, thus creating porous structures with enlarged surface. Such channels have large application potential as a carrier structure for the catalyst in micro-steam fuel reformers in compact fuel cells used as auxiliary power units for the on-board electronics in vehicles or can be used for fuel injection or fuel heating systems.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128431792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Threshold voltage calculation in ultra-thin film SOI MOSFETs using the effective potential","authors":"S. M. Ramey, D. Ferry","doi":"10.1109/NANO.2002.1032222","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032222","url":null,"abstract":"The success of the effective potential method of including quantum confinement effects in simulations of MOSFETs is based on the ability to calculate ahead of time the extent of the Gaussian wave-packet used to describe the electron. In the calculation of the Gaussian, the inversion layer is assumed to form in a triangular potential well, from which a suitable standard deviation can be obtained. The situation in an ultra-thin SOI MOSFET is slightly different, in that the potential well has a triangular bottom, but there is a significant contribution to the confinement from the rectangular barriers formed by the gate oxide and the buried oxide (BOX). For this more complex potential well, it is of interest to determine the range of applicability of the constant standard deviation effective potential model. In this work we include this effective potential model in 3D Monte Carlo calculations of the threshold voltage of ultra-thin SOI MOSFETs. We find that the effective potential recovers the expected trend in threshold voltage shift with shrinking silicon thickness, down to a thickness of approximately 3 nm.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132946654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"New technology for the manufacturing of nanocrystalline materials","authors":"J. Nikoloz, M. Archil, C. Roin","doi":"10.1109/NANO.2002.1032245","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032245","url":null,"abstract":"For the manufacturing of nanocrystalline materials have been developed several methods. One of the methods is based on fabrication of a metal-organic or a complex compound using appropriate metal salt solutions or their melts. Pyrolysis at 800-900/spl deg/C of an appropriate compound in hydrogen atmosphere obtains a charge of carbide or already fabricated hard metals. The second method is based on the manufacture of complex compounds and their further carbidization, using the gaseous phase. Complex compounds of optimum composition as well as a carbide making atmosphere give rise to the formation of nanocrystalline carbides and hard metals at 700-800/spl deg/C.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116035131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Nabet, E. Gallo, M. Freitag, A. T. Johnson, X. Chen
{"title":"Local variation of metal-semiconducting carbon nanotube contact barrier height","authors":"B. Nabet, E. Gallo, M. Freitag, A. T. Johnson, X. Chen","doi":"10.1109/NANO.2002.1032283","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032283","url":null,"abstract":"Carbon nanotubes provide great promise for future use as electronic devices. Previously we have used a conducting-tip atomic force microscope to measure the local field effect in a metal-semiconducting C nanotube-metal device. Here we propose a consistent electrostatic model that incorporates the image force, electric field and tip potential and describes how the latter reduces the potential barrier seen by thermionically emitted carriers in the metal-nanotube junction. The model describes a position-dependent barrier change, consistent with experimental data.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"264 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125717509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Muthukumar, H. Sheng, Z. Zhang, J. Zhong, N.W. Emanaetoglu, Y. Lu
{"title":"Selective growth of ZnO nanotips using MOCVD","authors":"S. Muthukumar, H. Sheng, Z. Zhang, J. Zhong, N.W. Emanaetoglu, Y. Lu","doi":"10.1109/NANO.2002.1032114","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032114","url":null,"abstract":"ZnO is a wide bandgap semiconductor having a direct bandgap of 3.32 eV at room temperature. It has an exciton binding energy of 60 meV. It is found to be significantly more radiation hard than Si, GaAs, and GaN, which is critical against wearing out during field emission. Furthermore, ZnO can also be made as transparent and highly conductive, or piezoelectric. The ZnO nanotips can be grown at relatively low temperatures, giving ZnO a unique advantage over other wide bandgap semiconductors, such as GaN and SiC. In the present work, we report the selective growth of ZnO nanotips on various substrates using MOCVD. The ZnO nanotips are single crystalline, n-type conductive and show good optical properties. These nanotips have potential applications in field emission devices and UV photonics.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125945945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}