纳米级弹道mosfet的仿真技术与方法

Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI:10.1109/NANO.2002.1032223

G. Iannaccone, G. Fiori, G. Curatola

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引用次数: 3

摘要

在本文中，我们介绍了我们用于在块状硅、绝缘体上硅和硅锗中进行纳米级弹道mosfet模拟的方法和技术。给出了通道长度为25nm的典型结构的结果。

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Techniques and methods for the simulation of nanoscale ballistic MOSFETs

In this paper, we present the methods and the techniques we use for performing the simulation of nanoscale ballistic MOSFETs in bulk silicon, silicon on insulator, and silicon-germanium. Results for typical structures with channel length of 25 nm are presented.

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Proceedings of the 2nd IEEE Conference on Nanotechnology

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