网络拓扑结构对纳米簇膜输运的影响

R. Rendell, M. Ancona, W. Kruppa, E. Foos, A. W. Snow, D. Park, J. B. Boos
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引用次数: 0

摘要

利用蒙特卡罗模拟方法,研究了网络拓扑结构对电子输运的影响。阈值电压漂移和I-V曲线的非线性都对随机空洞引起的导通路径的横向波动敏感。研究发现,对于单位或更大的纵横比网络和具有50%水平连接的随机空洞网络,非线性最大。与金纳米簇I-V测量结果进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of network topology on nanocluster film transport
The effects of network topology on electron transport is studied using Monte Carlo simulations of tunnel junction networks with transport governed by Coulomb blockade. Both the threshold voltage shift and the nonlinearity of the I-V curves are sensitive to lateral fluctuations of the conduction paths due to random voids. The nonlinearity is found to be maximized for aspect ratios of the network of unity or larger and for random void networks with 50% horizontal connections. Comparisons are made with Au nanocluster I-V measurements.
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