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2009 European Conference on Radiation and Its Effects on Components and Systems最新文献

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Electron environment specification models for navigation orbits 导航轨道电子环境规范模型
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-12-01 DOI: 10.1109/RADECS.2009.5994677
S. Bourdarie, D. Lazaro, A. Hands, K. Ryden, P. Nieminen
{"title":"Electron environment specification models for navigation orbits","authors":"S. Bourdarie, D. Lazaro, A. Hands, K. Ryden, P. Nieminen","doi":"10.1109/RADECS.2009.5994677","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994677","url":null,"abstract":"Electron environment specification models have been developed to assess long term effects (e.g. doses) as well as short term effects (e.g. internal charging) for navigation orbiting spacecraft design.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114658231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Two-Photon Absorption (TPA) backside pulsed laser tests in the LM324 双光子吸收(TPA)背面脉冲激光在LM324上的测试
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-14 DOI: 10.1109/RADECS.2009.5994568
I. Lopez-Calle, F. J. Franco, J. G. Izquierdo, J. Agapito
{"title":"Two-Photon Absorption (TPA) backside pulsed laser tests in the LM324","authors":"I. Lopez-Calle, F. J. Franco, J. G. Izquierdo, J. Agapito","doi":"10.1109/RADECS.2009.5994568","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994568","url":null,"abstract":"Experiments to obtain XY scans on the surface of an amplifier at different depths and energy values were performed at the UCM, the results of which are shown and discussed in this paper.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125868288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories 单和多级高密度NAND快闪记忆体的TID响应和SEE表征比较
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-14 DOI: 10.1109/RADECS.2009.5994731
F. Irom, D. Nguyen, R. Harboe-Sørensen, A. Virtanen
{"title":"Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories","authors":"F. Irom, D. Nguyen, R. Harboe-Sørensen, A. Virtanen","doi":"10.1109/RADECS.2009.5994731","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994731","url":null,"abstract":"Heavy ion single-event measurements and total ionizing dose (TID) response for 8Gb commercial NAND flash memories are reported. Radiation results of multilevel flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories. The charge pump in this study survived up to 600 krads.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125919773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
MUSCA SEP3 contributions to investigate the direct ionization proton upset in 65nm technology for space, atmospheric and ground applications MUSCA SEP3为研究65nm直接电离质子扰动技术在空间、大气和地面的应用做出了贡献
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994577
G. Hubert, S. Duzellier, F. Bezerra, R. Ecoffet
{"title":"MUSCA SEP3 contributions to investigate the direct ionization proton upset in 65nm technology for space, atmospheric and ground applications","authors":"G. Hubert, S. Duzellier, F. Bezerra, R. Ecoffet","doi":"10.1109/RADECS.2009.5994577","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994577","url":null,"abstract":"This paper presents the investigation of upset induced by direct ionisation of proton in 65nm technology and evaluates the operational SER consequences in space, atmospheric and ground environments.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129310524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
TCAD mixed-mode simulation of bitflip with pulsed laser 脉冲激光位跳转的TCAD混合模仿真
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994581
F. R. Palomo, J. M. Mogollón, J. Napoles, M. Aguirre
{"title":"TCAD mixed-mode simulation of bitflip with pulsed laser","authors":"F. R. Palomo, J. M. Mogollón, J. Napoles, M. Aguirre","doi":"10.1109/RADECS.2009.5994581","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994581","url":null,"abstract":"Simulation of pulsed laser single event effects (SEE) is not considered in most of the well known software packages for mixed-mode simulation of SEE. This paper shows an adaptation of the Sentaurus TCAD suite to pulsed laser SEE simulation. After the literature review, we present the virtual model of the target transistor, calibrated against a real transistor of an specific ASIC. That virtual model is used to evaluate the Linear Energy Transfer (LET) threshold for bitflip in a simulated flip-flop circuit using the heavy-ion simulation tools of TCAD. That simulations help us to make an adaptation of Sentaurus TCAD for simulation of pulsed laser experiments. The pulsed laser simulation results are compared with a laser pulse experiment, showing that the proposed model achieves more accuracy than previous models referred to in the literature.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130579579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparison of γ and β-ray irradiation effects in sol-gel Ge-doped SiO2 溶胶-凝胶掺锗SiO2的γ射线和β射线辐照效应比较
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994660
A. Alessi, S. Agnello, F. Gelardi, D. Sporea, C. Oproiu, B. Brichard
{"title":"Comparison of γ and β-ray irradiation effects in sol-gel Ge-doped SiO2","authors":"A. Alessi, S. Agnello, F. Gelardi, D. Sporea, C. Oproiu, B. Brichard","doi":"10.1109/RADECS.2009.5994660","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994660","url":null,"abstract":"We report an experimental study on the comparison between the γ or β ray induced Ge related point defects in Ge doped silica. Silica samples doped with ∼2.2 1017 Ge atoms/cm3 produced with the sol-gel technique have been irradiated. The effects of the irradiation have been investigated by optical absorption, photoluminescence and electron paramagnetic resonance spectroscopy in order to evaluate the generation and the dependence on dose of the Ge(1), E'Ge, Germanium Lone Pair Center (GLPC) and H(II) point defects. No relevant differences between the concentrations of γ or β ray induced Ge(1) and E'Ge point defects have been observed. In addition, it is found that both irradiations are able to induce GLPC with the same dose dependence. The main difference regards the formation of H(II), that arise from the reaction of GLPC with H released by irradiation, their concentration being larger after γ irradiation. It is suggested that the larger efficiency of H(II) generation by γ ray is due to the specific mechanism involving H released by irradiation. At variance, for the other Ge-related defects, our data show that the same processes of formation of such centers are involved in γ or β ray irradiation.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115835526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transistor sizing and folding techniques for radiation hardening 辐射硬化晶体管尺寸和折叠技术
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994705
F. Kastensmidt, T. Assis, I. Ribeiro, G. Wirth, L. Brusamarello, R. Reis
{"title":"Transistor sizing and folding techniques for radiation hardening","authors":"F. Kastensmidt, T. Assis, I. Ribeiro, G. Wirth, L. Brusamarello, R. Reis","doi":"10.1109/RADECS.2009.5994705","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994705","url":null,"abstract":"The efficiency of transistor sizing and folding techniques to mitigate SET in CMOS circuits is evaluated using circuit and device simulations. According to the LET of the ionizing particle, the SET can be more or less filtered by these methods. Based on the results of the circuit and device simulations, a novel technique able to reduce the SET effect is proposed. The method combines transistor sizing, folding and resistors. The technique was applied in a chain of inverters and SRAM cell.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"289 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121806120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Selection of the optimal interleaving distance for memories suffering MCUs mcu存储器最佳交错距离的选择
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994704
P. Reviriego, J. A. Maestro, S. Baeg, S. Wen, R. Wong
{"title":"Selection of the optimal interleaving distance for memories suffering MCUs","authors":"P. Reviriego, J. A. Maestro, S. Baeg, S. Wen, R. Wong","doi":"10.1109/RADECS.2009.5994704","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994704","url":null,"abstract":"As technology shrinks, Multiple Cell Upsets (MCU) are becoming a more prominent effect with a large impact on memory reliability. To protect memories from MCUs, single error correction codes (SEC) and interleaving are commonly used. The interleaving distance (ID) is selected such that all errors in an MCU occur on different logical words. This is achieved by using interleaving distances that are larger than the largest expected MCU. However, the use of a large interleaving distance usually results in an area increase and a more complex design. In this paper, the selection of the optimal interleaving distance is explored, minimizing area and complexity without compromising memory reliability.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132440791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of proton and ion beam irradiation on titanium dioxide memristors 质子和离子束辐照对二氧化钛忆阻器的影响
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994554
M. Vujisić, K. Stanković, P. Osmokrović
{"title":"Effects of proton and ion beam irradiation on titanium dioxide memristors","authors":"M. Vujisić, K. Stanković, P. Osmokrović","doi":"10.1109/RADECS.2009.5994554","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994554","url":null,"abstract":"Effects of titanium dioxide memristor exposure to proton and ion beams are investigated. A memristor model assuming ohmic electronic conduction and linear ionic drift is used for the analysis. Simulations of particle transport suggest that radiation induced oxygen ion/oxygen vacancy pairs can influence the device's operation by lowering both the mobility of the vacancies and the resistance of the stoichiometric oxide region. These radiation induced changes affect the current-voltage characteristic and state retention ability of the memristor.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115587329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SEU data and fault tolerance analysis of a LEON 3FT processor LEON 3FT处理器的SEU数据和容错分析
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI: 10.1109/RADECS.2009.5994733
A. Jordan, C. Hafer, J. Mabra, S. Griffith, J. Nagy, M. Lahey, D. Harris
{"title":"SEU data and fault tolerance analysis of a LEON 3FT processor","authors":"A. Jordan, C. Hafer, J. Mabra, S. Griffith, J. Nagy, M. Lahey, D. Harris","doi":"10.1109/RADECS.2009.5994733","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994733","url":null,"abstract":"Single-bit per word error protection is implemented on this LEON 3 fault tolerant processor. SEU data is reviewed and fault analysis is examined based on processor operation and operational environment.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124491385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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