单和多级高密度NAND快闪记忆体的TID响应和SEE表征比较

2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-14 DOI:10.1109/RADECS.2009.5994731

F. Irom, D. Nguyen, R. Harboe-Sørensen, A. Virtanen

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引用次数: 5

摘要

报道了8Gb商用NAND闪存的重离子单事件测量和总电离剂量(TID)响应。将多级闪光技术的辐射结果与单级闪光技术的辐射结果进行了比较。与多电平器件相比，单电平器件对单事件扰动(seu)的敏感性较低。一般来说，与老一代闪存相比，这些商用高密度存储器表现出较少的TID退化。在这项研究中，电荷泵的重量可达600公斤。

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Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories

Heavy ion single-event measurements and total ionizing dose (TID) response for 8Gb commercial NAND flash memories are reported. Radiation results of multilevel flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories. The charge pump in this study survived up to 600 krads.

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来源期刊

2009 European Conference on Radiation and Its Effects on Components and Systems

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