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Laser SEL sensitivity mapping of SRAM cells SRAM细胞的激光SEL灵敏度映射
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994668
A. Burnell, A. Chugg, R. Harboe-Sørensen
{"title":"Laser SEL sensitivity mapping of SRAM cells","authors":"A. Burnell, A. Chugg, R. Harboe-Sørensen","doi":"10.1109/radecs.2009.5994668","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994668","url":null,"abstract":"It is shown that laser SEL sensitivity mapping at the cell level exhibits a repetitive pattern. In conjunction with depth profiling, individual sensitive regions are shown to be approximate fat ellipsoids, which has implications for SEL specifications in the space environment.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130923127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bias effects on total dose-induced degradation of bipolar linear microcircuits for switched dose-rate irradiation 开关剂量率辐照下双极线性微电路总剂量诱导降解的偏压效应
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994665
Y. G. Velo, J. Boch, N. Roche, S. Perez, J. Vaillé, L. Dusseau, F. Saigné, E. Lorfèvre, peixiong zhao, C. Chatry, A. Canals
{"title":"Bias effects on total dose-induced degradation of bipolar linear microcircuits for switched dose-rate irradiation","authors":"Y. G. Velo, J. Boch, N. Roche, S. Perez, J. Vaillé, L. Dusseau, F. Saigné, E. Lorfèvre, peixiong zhao, C. Chatry, A. Canals","doi":"10.1109/radecs.2009.5994665","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994665","url":null,"abstract":"Accelerated test techniques are needed in order to qualify bipolar devices intended for use in low dose rate environments. Indeed, low dose rate is known to enhance degradation of bipolar devices. Moreover, the bias of microcircuits is known to play a significant role in device degradation. In this work, bipolar microcircuits are irradiated with different bias configurations during the irradiation. It is shown that the bias configuration leading to the worst-case degradation is dose-rate dependent. Moreover, if a time-saving evaluation technique based on dose-rate switching is to be used, the effect of bias has to investigated. Good agreement is found between the predictive curve obtained with the switched dose-rate technique and the low dose rate data.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130001417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Front-end performance and charge collection properties of heavily irradiated DNW MAPS 强辐照DNW MAPS的前端性能和电荷收集特性
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994549
L. Ratti, Marco Dellagiovanna, M. Manghisoni, V. Re, G. Traversi, S. Zucca, S. Bettarini, F. Morsani, G. Rizzo
{"title":"Front-end performance and charge collection properties of heavily irradiated DNW MAPS","authors":"L. Ratti, Marco Dellagiovanna, M. Manghisoni, V. Re, G. Traversi, S. Zucca, S. Bettarini, F. Morsani, G. Rizzo","doi":"10.1109/radecs.2009.5994549","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994549","url":null,"abstract":"Deep N-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm technology have been exposed to γ-rays up to an integrated dose of about 10 Mrad and subjected to a 100 °C/168 h annealing cycle. Device tolerance to total ionizing dose has been evaluated by monitoring the change in charge sensitivity, noise and charge collection properties after each step of the irradiation and annealing campaign. Damage mechanisms and their relation to front-end architecture and sensor features are thoroughly discussed by comparing the response to ionizing radiation of different test structures and based on radiation induced degradation models in single MOS transistors.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131690756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Evaluating the impact of DFM library optimizations on alpha-induced SEU sensitivity in a microprocessor core 评估DFM库优化对微处理器核心中α诱导的SEU灵敏度的影响
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994699
P. Rech, A. Paccagnella, M. Grosso, M. Reorda, F. Melchiori, D. Appello
{"title":"Evaluating the impact of DFM library optimizations on alpha-induced SEU sensitivity in a microprocessor core","authors":"P. Rech, A. Paccagnella, M. Grosso, M. Reorda, F. Melchiori, D. Appello","doi":"10.1109/radecs.2009.5994699","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994699","url":null,"abstract":"This paper presents and discusses the results of Alpha Single Event Upset (SEU) tests on an embedded 8051 microprocessor core implemented in three different cell libraries. Each standard cell library is based on a different Design For Manufacturability (DFM) optimization strategy; our goal is to understand how these strategies may affect the device sensitivity to alpha-induced Soft Errors. The three implementations are tested exploiting advanced Design for Testability (DfT) methodologies and radiation experiments results are compared.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133154512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Large SET broadening in a fully-depleted SOI technology — Mitigation with body contacts 在完全耗尽SOI技术中大幅扩大SET -通过身体接触缓解
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994558
V. Ferlet-Cavrois, D. Kobayashi, D. McMorrow, J. Schwank, H. Ikeda, M. Gaillardin, O. Flament, K. Hirose
{"title":"Large SET broadening in a fully-depleted SOI technology — Mitigation with body contacts","authors":"V. Ferlet-Cavrois, D. Kobayashi, D. McMorrow, J. Schwank, H. Ikeda, M. Gaillardin, O. Flament, K. Hirose","doi":"10.1109/radecs.2009.5994558","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994558","url":null,"abstract":"Large SET broadening effects are shown in fully-depleted SOI inverter chains using laser irradiation. These broadening effects are due to significant floating-body effects in single transistors. Designing with body contacts can efficiently suppress these effects.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121313370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Inner belt anisotropy investigations based on the Standard Radiation Environment Monitor (SREM) 基于标准辐射环境监测仪(SREM)的内带各向异性研究
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994710
M. Siegl, H. Evans, E. Daly, G. Santin, P. Nieminen, P. Buhler
{"title":"Inner belt anisotropy investigations based on the Standard Radiation Environment Monitor (SREM)","authors":"M. Siegl, H. Evans, E. Daly, G. Santin, P. Nieminen, P. Buhler","doi":"10.1109/radecs.2009.5994710","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994710","url":null,"abstract":"The Standard Radiation Environment Monitor (SREM) is a particle detector developed for wide use on ESA spacecraft. It is flying on several ESA missions, most recently the Herschel and Planck space telescopes. Using data from the SREM unit on PROBA-1 in LEO, pitch angle anisotropies in the inner Van Allen belt are investigated. The sensitivity of the SREM to pitch angle induced flux anisotropies can be linked to the directional response function of the SREM, obtained using GRAS/Geant4 Monte-Carlo simulations. The directional response function is combined with an anisotropic version of the AP8 model (based on the Badhwar-Konradi anisotropy distribution) to yield improved count predictions. The importance of considering flux anisotropies is shown for both short-term data and long-term integrated counts. Significant improvements to the AP8 model can be realised.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123941224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
TID and displacement damage effects in vertical and lateral power MOSFETs for integrated DC-DC converters 集成DC-DC变换器中垂直和横向功率mosfet的TID和位移损伤效应
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994551
F. Faccio, B. Allongue, G. Blanchot, C. Fuentes, S. Michelis, S. Orlandi, R. Sorge
{"title":"TID and displacement damage effects in vertical and lateral power MOSFETs for integrated DC-DC converters","authors":"F. Faccio, B. Allongue, G. Blanchot, C. Fuentes, S. Michelis, S. Orlandi, R. Sorge","doi":"10.1109/radecs.2009.5994551","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994551","url":null,"abstract":"TID and displacement damage effects are studied for vertical and lateral power MOSFETs in five different technologies in view of the development of radiation-tolerant fully integrated DC-DC converters. Investigation is pushed to the very high level of radiation expected for an upgrade to the LHC experiments. TID induces threshold voltage shifts and, in n-channel transistors, source-drain leakage currents. Wide variability in the magnitude of these effects is observed. Displacement damage increases the on-resistance of both vertical and lateral high-voltage transistors. In the latter case, degradation at high particle fluence might lead to a distortion of the output characteristics curve. HBD techniques to limit or eliminate the radiation-induced leakage currents are successfully applied to these high-voltage transistors, but have to be used carefully to avoid consequences on the breakdown voltage.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122905359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Effect of the ion mass and energy on the response of 70-nm SOI transistors to the ion deposited charge by direct ionization 离子质量和能量对直接电离70 nm SOI晶体管对离子沉积电荷响应的影响
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994707
M. Raine, M. Gaillardin, J. Sauvestre, O. Flament, A. Bournel, V. Aubry-Fortuna
{"title":"Effect of the ion mass and energy on the response of 70-nm SOI transistors to the ion deposited charge by direct ionization","authors":"M. Raine, M. Gaillardin, J. Sauvestre, O. Flament, A. Bournel, V. Aubry-Fortuna","doi":"10.1109/radecs.2009.5994707","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994707","url":null,"abstract":"The response of SOI transistors under heavy ion irradiation is analyzed using Geant4 and Synopsys Sentaurus device simulations. The ion mass and energy has a significant impact on the radial ionization profile of the ion deposited charge. For example, for an identical LET, the higher the ion energy per nucleon, the wider the radial ionization track. For a 70-nm SOI technology, the track radius of high energy ions (> 10 MeV/a) is larger than the transistor sensitive volume; part of the ion charge recombines in the highly doped source or drain regions and does not participate to the transistor electric response. At lower energy (< 10 MeV/a), as often used for ground testing, the track radius is smaller than the transistor sensitive volume, and the entire charge is used for the transistor response. The collected charge is then higher, corresponding to a worst-case response of the transistor. Implications for the hardness assurance of highly-scaled generations are discussed.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122055351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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