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2009 European Conference on Radiation and Its Effects on Components and Systems最新文献

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Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers 用于SiGe HBT移位寄存器和时钟缓冲器的非tmr seu强化技术
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994703
E. Wilcox, S. Phillips, J. Cressler, P. Marshall, M. Carts, J. Pellish, L. Richmond, W. Mathes, B. Randall, D. Post, B. Gilbert, E. Daniel
{"title":"Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers","authors":"E. Wilcox, S. Phillips, J. Cressler, P. Marshall, M. Carts, J. Pellish, L. Richmond, W. Mathes, B. Randall, D. Post, B. Gilbert, E. Daniel","doi":"10.1109/radecs.2009.5994703","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994703","url":null,"abstract":"We report new results from both broad-beam, heavy-ion and proton experiments for circuit-level RHBD techniques in SiGe digital logic. Redundant circuit elements within the latches are used to significantly reduce single-event upset rates in shift registers and clock paths, without resorting to TMR techniques.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127031450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heavy ion testing at the galactic cosmic ray energy peak 银河系宇宙射线能量峰值的重离子测试
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/RADECS.2009.5994714
J. Pellish, M. Xapsos, K. Label, P. Marshall, D. Heidel, K. Rodbell, M. Hakey, P. Dodd, M. Shaneyfelt, J. Schwank, R. Baumann, Xiaowei Deng, A. Marshall, B. Sierawski, J. Black, R. Reed, peixiong zhao, Hak S. Kim, M. Berg, M. Campola, M. Friendlich, C. Perez, A. Phan, C. Seidleck
{"title":"Heavy ion testing at the galactic cosmic ray energy peak","authors":"J. Pellish, M. Xapsos, K. Label, P. Marshall, D. Heidel, K. Rodbell, M. Hakey, P. Dodd, M. Shaneyfelt, J. Schwank, R. Baumann, Xiaowei Deng, A. Marshall, B. Sierawski, J. Black, R. Reed, peixiong zhao, Hak S. Kim, M. Berg, M. Campola, M. Friendlich, C. Perez, A. Phan, C. Seidleck","doi":"10.1109/RADECS.2009.5994714","DOIUrl":"https://doi.org/10.1109/RADECS.2009.5994714","url":null,"abstract":"A 1 GeV/u 56Fe ion beam allows for true 90° tilt irradiations of various microelectronic components and reveals relevant upset trends for an abundant element at the GCR flux energy peak.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127894980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Enhancing observability of signal composition response and error signatures during dynamic SEE analog to digital device testing 增强动态SEE模拟到数字设备测试过程中信号组成响应和错误签名的可观察性
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994666
M. Berg, S. Buchner, H. Kim, M. Friendlich, C. Perez, A. Phan, C. Seidleck, K. Label
{"title":"Enhancing observability of signal composition response and error signatures during dynamic SEE analog to digital device testing","authors":"M. Berg, S. Buchner, H. Kim, M. Friendlich, C. Perez, A. Phan, C. Seidleck, K. Label","doi":"10.1109/radecs.2009.5994666","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994666","url":null,"abstract":"A novel method of dynamic SEE ADC testing is presented. The approach utilizes a FPGA core for processing and has proven to enhance error signature and signal integrity observation verses alternate techniques.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133756133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Total-dose effects caused by high-energy neutrons and γ-rays in Multiple-Gate FETs 多栅极场效应管中高能中子和γ射线引起的总剂量效应
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994544
V. Kilchytska, J. Alvarado, N. Collaert, R. Rooyakers, O. Militaru, G. Berger, D. Flandre
{"title":"Total-dose effects caused by high-energy neutrons and γ-rays in Multiple-Gate FETs","authors":"V. Kilchytska, J. Alvarado, N. Collaert, R. Rooyakers, O. Militaru, G. Berger, D. Flandre","doi":"10.1109/radecs.2009.5994544","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994544","url":null,"abstract":"This work investigates the effects of high-energy neutrons and γ-rays on Multiple-Gate FETs with different geometries (notably gate lengths down to 50 nm). The impact of radiation on device behavior is addressed through the variation of parameters such as threshold voltage, subthreshold slope, transconductance maximum and DIBL. It is shown that degradations caused by γ-rays and high-energy neutrons with similar doses are largely similar. It is revealed that, contrarily to the generally-believed immunity to irradiation, very short-channel FinFETs can become extremely sensitive to the total dose effect. The possible reasons are discussed.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115603271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
“Effective NIEL” in silicon: Calculation using molecular dynamic simulation results 硅中的“有效NIEL”:用分子动力学模拟结果计算
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994592
C. Inguimbert, P. Arnolda, T. Nuns, G. Rolland
{"title":"“Effective NIEL” in silicon: Calculation using molecular dynamic simulation results","authors":"C. Inguimbert, P. Arnolda, T. Nuns, G. Rolland","doi":"10.1109/radecs.2009.5994592","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994592","url":null,"abstract":"Molecular dynamic studies demonstrate that, under suitable conditions, low energy transfer below the atomic displacement threshold (Td) can increase damage production. In the case of silicon material, both these non linear subthreshold phenomena and recombination effects have been incorporated in a new model. In comparison with Kinchin Pease approach, our improved model, is able to estimate more accurately the number of displacements generated by a primary knock on atom. It is then used to calculate “effective NIEL”.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126107085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Effects of moisture on radiation-induced degradation in CMOS SOI transistors 水分对CMOS SOI晶体管辐射降解的影响
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994546
M. Shaneyfelt, J. Schwank, P. Dodd, T. A. Hill, S. M. Dalton, S. Swanson
{"title":"Effects of moisture on radiation-induced degradation in CMOS SOI transistors","authors":"M. Shaneyfelt, J. Schwank, P. Dodd, T. A. Hill, S. M. Dalton, S. Swanson","doi":"10.1109/radecs.2009.5994546","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994546","url":null,"abstract":"The effects of moisture on radiation-induced charge buildup in the oxides of a 0.35 μm SOI technology are explored. Data show no observable effects of moisture-related aging on radiation hardness. These results are in contrast to those of previous work performed on bulk MOS technologies fabricated in the 1980s. The cause of these differences do not appear to be due to differences in final chip passivation layers. Instead, other processing variables (including the use of different implant materials and thicker overlayers) may account for these differences. In any case, the SOI technology results indicate that not all advanced technologies exposed to moisture are necessarily susceptible to significant long-term radiation-induced aging effects.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114403199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Total dose effect on the propagation of single event transients in a CMOS inverter string CMOS逆变器串中单事件瞬态传播的总剂量效应
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994557
S. Buchner, M. Sibley, P. Eaton, D. Mavis, D. McMorrow
{"title":"Total dose effect on the propagation of single event transients in a CMOS inverter string","authors":"S. Buchner, M. Sibley, P. Eaton, D. Mavis, D. McMorrow","doi":"10.1109/radecs.2009.5994557","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994557","url":null,"abstract":"Recently, there has been considerable interest in the propagation of Single Event Transients (SETs) in both linear bipolar and digital CMOS circuits. [1,2,3,4,5] SETs appear at the outputs of these circuits as momentary glitches that, if sufficiently large and of sufficient duration, can be latched into follow-on circuitry and lead to system errors that are potentially catastrophic if not properly mitigated.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122050656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental validation of fault injection analyses by the FLIPPER tool FLIPPER工具故障注入分析的实验验证
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994711
M. Alderighi, F. Casini, S. D'Angelo, M. Mancini, D. M. Codinachs, S. Pastore, C. Poivey, G. Sechi, G. S. R. Weigand
{"title":"Experimental validation of fault injection analyses by the FLIPPER tool","authors":"M. Alderighi, F. Casini, S. D'Angelo, M. Mancini, D. M. Codinachs, S. Pastore, C. Poivey, G. Sechi, G. S. R. Weigand","doi":"10.1109/radecs.2009.5994711","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994711","url":null,"abstract":"The paper discusses the experimental validation of fault injection analyses accomplished with the FLIPPER tool. Validation has been accomplished through accelerated proton testing of a benchmark design provided by the European Space Agency.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"322 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132658930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Long-term exposure of fiber Bragg gratings in the BR1 low-flux nuclear reactor 光纤布拉格光栅在BR1低通量核反应堆中的长期暴露
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994686
A. Gusarov
{"title":"Long-term exposure of fiber Bragg gratings in the BR1 low-flux nuclear reactor","authors":"A. Gusarov","doi":"10.1109/radecs.2009.5994686","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994686","url":null,"abstract":"We report the results of a long-term exposure of fiber Bragg gratings in the BR1 low-flux nuclear reactor at SCK•CEN in Mol, Belgium. Gratings fabricated in the photosensitive and the standard fibers were installed in February 2000 in a research channel of the reactor and remained there till August 2008. During this time the reactor was operational 4690h so that the gratings received a total thermal/fast neutron fluence up to 16.9/1.47×1017 n/cm2, and a gamma-dose ∼10 MGy. The temperature cycled from 10 to 80°C. All the gratings were easily detectable at the end of the experiment. At that time most grating showed a slight amplitude degradation. However, for three gratings the amplitude remained unchanged within the measurement error. The Bragg wavelength tracing allows perfect match of the temperature data obtained with standard the thermocouples placed near the gratings. The results show that fiber Bragg gratings can be used for long-term temperature monitoring in nuclear installations.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129223086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Physical evidence for the electrical signature of SEGR on thin vertical oxides 薄垂直氧化物上SEGR电特征的物理证据
2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI: 10.1109/radecs.2009.5994570
R. Lawrence, Jeffery A. Zimmerman, J. Ross
{"title":"Physical evidence for the electrical signature of SEGR on thin vertical oxides","authors":"R. Lawrence, Jeffery A. Zimmerman, J. Ross","doi":"10.1109/radecs.2009.5994570","DOIUrl":"https://doi.org/10.1109/radecs.2009.5994570","url":null,"abstract":"Analysis techniques have been done to provide the physical evidence that the electrical signature observed from a single event gate rupture (SEGR) event on a deep trench oxide capacitor from 90nm bulk complementary metal oxide semiconductor (CMOS) technology, used for the reduction of single event upsets (SEU), does identify that dielectric breakdown has occurred. SEGR damaged trench oxides were identified via a voltage contrast technique using a focused ion beam (FIB). The FIB was used to delayered and expose the deep trenches. A wet chemical etch was used to identify the location of SEGR leakage path. The oxide rupture location was observed at the top of the deep trench capacitor.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126706471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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