Large SET broadening in a fully-depleted SOI technology — Mitigation with body contacts

2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI:10.1109/radecs.2009.5994558

V. Ferlet-Cavrois, D. Kobayashi, D. McMorrow, J. Schwank, H. Ikeda, M. Gaillardin, O. Flament, K. Hirose

引用次数: 2

Abstract

Large SET broadening effects are shown in fully-depleted SOI inverter chains using laser irradiation. These broadening effects are due to significant floating-body effects in single transistors. Designing with body contacts can efficiently suppress these effects.

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在完全耗尽SOI技术中大幅扩大SET -通过身体接触缓解

利用激光照射在完全耗尽的SOI逆变器链中显示出较大的SET展宽效应。这些展宽效应是由于单晶体管中显著的浮体效应造成的。身体接触设计可以有效地抑制这些影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 European Conference on Radiation and Its Effects on Components and Systems

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