在完全耗尽SOI技术中大幅扩大SET -通过身体接触缓解

2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 1900-01-01 DOI:10.1109/radecs.2009.5994558

V. Ferlet-Cavrois, D. Kobayashi, D. McMorrow, J. Schwank, H. Ikeda, M. Gaillardin, O. Flament, K. Hirose

{"title":"在完全耗尽SOI技术中大幅扩大SET -通过身体接触缓解","authors":"V. Ferlet-Cavrois, D. Kobayashi, D. McMorrow, J. Schwank, H. Ikeda, M. Gaillardin, O. Flament, K. Hirose","doi":"10.1109/radecs.2009.5994558","DOIUrl":null,"url":null,"abstract":"Large SET broadening effects are shown in fully-depleted SOI inverter chains using laser irradiation. These broadening effects are due to significant floating-body effects in single transistors. Designing with body contacts can efficiently suppress these effects.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"140 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Large SET broadening in a fully-depleted SOI technology — Mitigation with body contacts\",\"authors\":\"V. Ferlet-Cavrois, D. Kobayashi, D. McMorrow, J. Schwank, H. Ikeda, M. Gaillardin, O. Flament, K. Hirose\",\"doi\":\"10.1109/radecs.2009.5994558\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Large SET broadening effects are shown in fully-depleted SOI inverter chains using laser irradiation. These broadening effects are due to significant floating-body effects in single transistors. Designing with body contacts can efficiently suppress these effects.\",\"PeriodicalId\":392728,\"journal\":{\"name\":\"2009 European Conference on Radiation and Its Effects on Components and Systems\",\"volume\":\"140 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 European Conference on Radiation and Its Effects on Components and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/radecs.2009.5994558\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 European Conference on Radiation and Its Effects on Components and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs.2009.5994558","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

利用激光照射在完全耗尽的SOI逆变器链中显示出较大的SET展宽效应。这些展宽效应是由于单晶体管中显著的浮体效应造成的。身体接触设计可以有效地抑制这些影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Large SET broadening in a fully-depleted SOI technology — Mitigation with body contacts

Large SET broadening effects are shown in fully-depleted SOI inverter chains using laser irradiation. These broadening effects are due to significant floating-body effects in single transistors. Designing with body contacts can efficiently suppress these effects.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2009 European Conference on Radiation and Its Effects on Components and Systems

自引率

0.00%

发文量