Y. G. Velo, J. Boch, N. Roche, S. Perez, J. Vaillé, L. Dusseau, F. Saigné, E. Lorfèvre, peixiong zhao, C. Chatry, A. Canals
{"title":"Bias effects on total dose-induced degradation of bipolar linear microcircuits for switched dose-rate irradiation","authors":"Y. G. Velo, J. Boch, N. Roche, S. Perez, J. Vaillé, L. Dusseau, F. Saigné, E. Lorfèvre, peixiong zhao, C. Chatry, A. Canals","doi":"10.1109/radecs.2009.5994665","DOIUrl":null,"url":null,"abstract":"Accelerated test techniques are needed in order to qualify bipolar devices intended for use in low dose rate environments. Indeed, low dose rate is known to enhance degradation of bipolar devices. Moreover, the bias of microcircuits is known to play a significant role in device degradation. In this work, bipolar microcircuits are irradiated with different bias configurations during the irradiation. It is shown that the bias configuration leading to the worst-case degradation is dose-rate dependent. Moreover, if a time-saving evaluation technique based on dose-rate switching is to be used, the effect of bias has to investigated. Good agreement is found between the predictive curve obtained with the switched dose-rate technique and the low dose rate data.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 European Conference on Radiation and Its Effects on Components and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs.2009.5994665","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Accelerated test techniques are needed in order to qualify bipolar devices intended for use in low dose rate environments. Indeed, low dose rate is known to enhance degradation of bipolar devices. Moreover, the bias of microcircuits is known to play a significant role in device degradation. In this work, bipolar microcircuits are irradiated with different bias configurations during the irradiation. It is shown that the bias configuration leading to the worst-case degradation is dose-rate dependent. Moreover, if a time-saving evaluation technique based on dose-rate switching is to be used, the effect of bias has to investigated. Good agreement is found between the predictive curve obtained with the switched dose-rate technique and the low dose rate data.