Bias effects on total dose-induced degradation of bipolar linear microcircuits for switched dose-rate irradiation

Y. G. Velo, J. Boch, N. Roche, S. Perez, J. Vaillé, L. Dusseau, F. Saigné, E. Lorfèvre, peixiong zhao, C. Chatry, A. Canals
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Abstract

Accelerated test techniques are needed in order to qualify bipolar devices intended for use in low dose rate environments. Indeed, low dose rate is known to enhance degradation of bipolar devices. Moreover, the bias of microcircuits is known to play a significant role in device degradation. In this work, bipolar microcircuits are irradiated with different bias configurations during the irradiation. It is shown that the bias configuration leading to the worst-case degradation is dose-rate dependent. Moreover, if a time-saving evaluation technique based on dose-rate switching is to be used, the effect of bias has to investigated. Good agreement is found between the predictive curve obtained with the switched dose-rate technique and the low dose rate data.
开关剂量率辐照下双极线性微电路总剂量诱导降解的偏压效应
为了使双极器件在低剂量率环境中使用的合格,需要加速测试技术。事实上,已知低剂量率会增强双极器件的降解。此外,众所周知,微电路的偏置在器件退化中起着重要作用。在这项工作中,双极微电路在辐照期间以不同的偏压配置照射。结果表明,导致最坏情况降解的偏置配置与剂量率有关。此外,如果要使用基于剂量率转换的省时评估技术,则必须研究偏置的影响。用切换剂量率技术得到的预测曲线与低剂量率数据吻合良好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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