质子和离子束辐照对二氧化钛忆阻器的影响

2009 European Conference on Radiation and Its Effects on Components and Systems Pub Date : 2009-09-01 DOI:10.1109/RADECS.2009.5994554

M. Vujisić, K. Stanković, P. Osmokrović

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引用次数: 0

摘要

研究了质子束和离子束对二氧化钛忆阻器的影响。采用假设欧姆电子传导和线性离子漂移的忆阻器模型进行分析。粒子输运的模拟表明，辐射诱导的氧离子/氧空位对可以通过降低空位的迁移率和化学计量氧化区的电阻来影响器件的运行。这些辐射引起的变化影响了忆阻器的电流-电压特性和状态保持能力。

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Effects of proton and ion beam irradiation on titanium dioxide memristors

Effects of titanium dioxide memristor exposure to proton and ion beams are investigated. A memristor model assuming ohmic electronic conduction and linear ionic drift is used for the analysis. Simulations of particle transport suggest that radiation induced oxygen ion/oxygen vacancy pairs can influence the device's operation by lowering both the mobility of the vacancies and the resistance of the stoichiometric oxide region. These radiation induced changes affect the current-voltage characteristic and state retention ability of the memristor.

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来源期刊

2009 European Conference on Radiation and Its Effects on Components and Systems

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