mcu存储器最佳交错距离的选择

P. Reviriego, J. A. Maestro, S. Baeg, S. Wen, R. Wong
{"title":"mcu存储器最佳交错距离的选择","authors":"P. Reviriego, J. A. Maestro, S. Baeg, S. Wen, R. Wong","doi":"10.1109/RADECS.2009.5994704","DOIUrl":null,"url":null,"abstract":"As technology shrinks, Multiple Cell Upsets (MCU) are becoming a more prominent effect with a large impact on memory reliability. To protect memories from MCUs, single error correction codes (SEC) and interleaving are commonly used. The interleaving distance (ID) is selected such that all errors in an MCU occur on different logical words. This is achieved by using interleaving distances that are larger than the largest expected MCU. However, the use of a large interleaving distance usually results in an area increase and a more complex design. In this paper, the selection of the optimal interleaving distance is explored, minimizing area and complexity without compromising memory reliability.","PeriodicalId":392728,"journal":{"name":"2009 European Conference on Radiation and Its Effects on Components and Systems","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Selection of the optimal interleaving distance for memories suffering MCUs\",\"authors\":\"P. Reviriego, J. A. Maestro, S. Baeg, S. Wen, R. Wong\",\"doi\":\"10.1109/RADECS.2009.5994704\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As technology shrinks, Multiple Cell Upsets (MCU) are becoming a more prominent effect with a large impact on memory reliability. To protect memories from MCUs, single error correction codes (SEC) and interleaving are commonly used. The interleaving distance (ID) is selected such that all errors in an MCU occur on different logical words. This is achieved by using interleaving distances that are larger than the largest expected MCU. However, the use of a large interleaving distance usually results in an area increase and a more complex design. In this paper, the selection of the optimal interleaving distance is explored, minimizing area and complexity without compromising memory reliability.\",\"PeriodicalId\":392728,\"journal\":{\"name\":\"2009 European Conference on Radiation and Its Effects on Components and Systems\",\"volume\":\"101 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 European Conference on Radiation and Its Effects on Components and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.2009.5994704\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 European Conference on Radiation and Its Effects on Components and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.2009.5994704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

随着技术的不断发展,MCU (Multiple Cell Upsets)对存储器可靠性的影响越来越大。为了保护存储器免受mcu的攻击,通常使用单错误纠正码(SEC)和交错。交错距离(ID)的选择使得MCU中的所有错误发生在不同的逻辑字上。这是通过使用比最大预期MCU更大的交错距离来实现的。然而,使用较大的交错距离通常会导致面积增加和设计更复杂。本文探讨了在不影响存储器可靠性的前提下,如何选择最优的交错距离,使面积和复杂度最小化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Selection of the optimal interleaving distance for memories suffering MCUs
As technology shrinks, Multiple Cell Upsets (MCU) are becoming a more prominent effect with a large impact on memory reliability. To protect memories from MCUs, single error correction codes (SEC) and interleaving are commonly used. The interleaving distance (ID) is selected such that all errors in an MCU occur on different logical words. This is achieved by using interleaving distances that are larger than the largest expected MCU. However, the use of a large interleaving distance usually results in an area increase and a more complex design. In this paper, the selection of the optimal interleaving distance is explored, minimizing area and complexity without compromising memory reliability.
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