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A single chip 2.20 GHz T/R module 单片2.20 GHz收发模块
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-08 DOI: 10.1109/MCS.1990.110948
M. Schindler, S. Chu, T. Kazior, A. Bertrand, K. Simon
{"title":"A single chip 2.20 GHz T/R module","authors":"M. Schindler, S. Chu, T. Kazior, A. Bertrand, K. Simon","doi":"10.1109/MCS.1990.110948","DOIUrl":"https://doi.org/10.1109/MCS.1990.110948","url":null,"abstract":"A single-chip 2-20-GHz transmit/receive (T/R) module has been fabricated. This monolithic microwave IC (MMIC) includes a four-stage power amplifier chain, a four-stage low-noise amplifier, chain, and two T/R switches. A selective ion implantation process was used. One implant profile was optimized for low-noise operation and a second was optimized for power performance. All the circuits were designed to be relatively insensitive to process variations, thereby ensuring adequate yield despite the complexity of the chip. Distributed amplifiers are used throughout, and the T/R switches use a standard series-shunt FET configuration. All circuits have been miniaturized to keep the total chip size small. The entire T/R circuit measures only 0.143 in*0.193 in (3.6 mm*4.9 mm).<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"38 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133586799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Multifunction chip set for T/R module receive path 用于收发模块接收路径的多功能芯片组
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-08 DOI: 10.1109/MCS.1990.110947
D. Willems, I. Bahl, M. Pollman, J. Jorgenson, E. Griffin, M. Coluzzi, S. Tantod, C. Andricos
{"title":"Multifunction chip set for T/R module receive path","authors":"D. Willems, I. Bahl, M. Pollman, J. Jorgenson, E. Griffin, M. Coluzzi, S. Tantod, C. Andricos","doi":"10.1109/MCS.1990.110947","DOIUrl":"https://doi.org/10.1109/MCS.1990.110947","url":null,"abstract":"The design and test results for multifunction monolithic microwave ICs (MMICs) for C-band transmit/receive (T/R) modules are presented. This small-signal chip set contains the entire receive path (5 stages of amplification and 10 passive devices) in just three chips. These ICs, fabricated with the multifunctional self-aligned gate (MSAG) process, demonstrate a high level of integration, excellent performance. and a good yield. The variable-gain low-noise amplifier has a 30+or-1-dB gain, and a 2.5-dB noise figure, the phase shifter single-pole, double-throw (SPDT) switch has an 8+or-1-dB loss, and the buffer amplifier has a 6.5+or-0.2-dB gain and a 3.5-dB noise figure. Average yield for these circuits was 40% or better.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"1 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117337326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Monolithic Ka band VCO using quarter micron GaAs MESFETs and integrated high-Q varactors 采用四分之一微米GaAs mesfet和集成高q变容器的单片Ka波段压控振荡器
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-08 DOI: 10.1109/MCS.1990.110949
M. McDermott, C. Sweeney, M. Benedek, G. Dawe
{"title":"Monolithic Ka band VCO using quarter micron GaAs MESFETs and integrated high-Q varactors","authors":"M. McDermott, C. Sweeney, M. Benedek, G. Dawe","doi":"10.1109/MCS.1990.110949","DOIUrl":"https://doi.org/10.1109/MCS.1990.110949","url":null,"abstract":"High-Q GaAs abrupt varactor diodes and 0.25- mu m GaAs MESFETs have been combined on a semiinsulating GaAs substrate for millimeter-wave monolithic IC applications. Based on the measured series resistance and capacitance, the diodes have a calculated Q at -4 V, 50 MHz of approximately 19000. The MESFETs have a measured gain of >6 dB at 35 GHz, with extrapolated values for f/sub t/ and f/sub max/ of 32 GHz and 78 GHz, respectively. A monolithic Ka-band voltage-controlled oscillator using these devices has been built and tested. Output powers of 60 mW with 70 MHz of tuning bandwidth and 40 mW with 120 MHz of tuning bandwidth have been measured at 32 GHz.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124761703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Ku- and K-band GaAs MMIC varactor-tuned FET oscillators using MeV ion-implanted buried-layer back contacts 使用MeV离子注入埋层背触点的Ku和k波段GaAs MMIC变容调谐FET振荡器
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110950
P. Mcnally, T. Smith, F. Phelleps, K. M. Hogan, B. Smith, H. Deitrich
{"title":"Ku- and K-band GaAs MMIC varactor-tuned FET oscillators using MeV ion-implanted buried-layer back contacts","authors":"P. Mcnally, T. Smith, F. Phelleps, K. M. Hogan, B. Smith, H. Deitrich","doi":"10.1109/MCS.1990.110950","DOIUrl":"https://doi.org/10.1109/MCS.1990.110950","url":null,"abstract":"An all ion-implant, planar process has been used to fabricate high-Q hyperabrupt carrier profile varactor diodes for use in GaAs monolithic microwave IC (MMIC) voltage-controlled oscillators (VCOs) with the state-of-the-art performance. These GaAs varactor-tuned FET oscillators operate at up to 24 GHz with a tuning bandwidth of 5 GHz in K-band. The high-Q varactors feature a buried N/sup +/ layer created by ion-implantation at up to 6 MeV. Separately masked implanted N/sup +/ areas connect the buried layer to ohmic contacts at the surface. A varactor f/sub c/ of 1600 GHz was obtained at 0.09 pF. The design, fabrication, and measurements of varactors and MMIC VCOs are described.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117141270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Monolithic 9 to 70 GHz distributed amplifier 单片9至70 GHz分布式放大器
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110931
N. Camilleri, P. Chye, A. Lee, P. Gregory
{"title":"Monolithic 9 to 70 GHz distributed amplifier","authors":"N. Camilleri, P. Chye, A. Lee, P. Gregory","doi":"10.1109/MCS.1990.110931","DOIUrl":"https://doi.org/10.1109/MCS.1990.110931","url":null,"abstract":"Multioctave monolithic GaAs pseudomorphic high-electron-mobility transistor (HEMT) amplifiers have been developed to operate from 9 to 70 GHz. These amplifiers make use of state-of-the-art HEMT devices of less than 0.2 mu m. Typical performance for a distributed amplifier using a 75- mu m device is 4 dB of gain with 0.5-dB peak-to-peak ripple and a maximum noise figure of 7 dB across the 9 to 70-GHz band. Monolithic distributed amplifier design with capacitive gate coupling is described.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117271949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
GaAs HBT MMIC broadband amplifiers from DC to 20 GHz 从直流到20 GHz的GaAs HBT MMIC宽带放大器
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110929
K. Kobayashi, D. Umemoto, R. Esfandiari, A. Oki, L. M. Pawlowicz, M. E. Hafizi, L. Tran, J. Camou, K. Stolt, D. Streit, M. E. Kim
{"title":"GaAs HBT MMIC broadband amplifiers from DC to 20 GHz","authors":"K. Kobayashi, D. Umemoto, R. Esfandiari, A. Oki, L. M. Pawlowicz, M. E. Hafizi, L. Tran, J. Camou, K. Stolt, D. Streit, M. E. Kim","doi":"10.1109/MCS.1990.110929","DOIUrl":"https://doi.org/10.1109/MCS.1990.110929","url":null,"abstract":"Three monolithic wideband and high-gain amplifiers implemented with 2-3- mu m GaAs heterojunction bipolar transistor (HBT) monolithic microwave IC (MMIC) technology are presented. A single-stage direct-coupled amplifier achieves a 3-dB bandwidth from DC to 20 GHz, which is believed to be the widest bandwidth reported for direct-coupled amplifiers. The amplifier has a 6-dB nominal gain with a peak gain of 7.3 dB at 10 GHz. The 1-dB compression is 10 dBm at midband, and the noise figure is between 7 and 10 dB over the bandwidth. A two-stage version of this amplifier achieves 14.5-dB gain up to 12 GHz. Its output power and noise performance are comparable to the single-stage version. The third wideband amplifier design is based on passive component and microstrip matching circuitry. The matched amplifier has 14.5-dB nominal gain with a 3-dB bandwidth from 5 to 12 GHz.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128781643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Octave band eleven watt power amplifier MMIC 倍频带11瓦功率放大器MMIC
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110933
J. Komiak
{"title":"Octave band eleven watt power amplifier MMIC","authors":"J. Komiak","doi":"10.1109/MCS.1990.110933","DOIUrl":"https://doi.org/10.1109/MCS.1990.110933","url":null,"abstract":"The design and performance of a two-stage 3.0-6.0 GHz MMIC (monolithic microwave IC) power amplifier that has established a new standard for power output and bandwidth in MMIC form is reported. The amplifier produces 11 W+or-1 dB from 3.0 to 6.0 GHz, with maximum power outputs of 13.5 W and 10.5 W at the respective S and C radar bands, and a minimum power of 9 W. This benchmark eclipses the best power level reported earlier for both two-stage (8 W at C-band) and single-stage (10 W at C-band) narrowband MMIC power amplifiers with a continuous bandwidth coverage of 67%. The yield of this MMIC, based upon 0.5- mu m gate-length selective-implant MESFET technology, averaged 43%, with a 57% yield from the best wafer.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117249631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A monolithic GaAs HBT upconverter 单片GaAs HBT上变频器
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110943
A.Y. Umeda, C. T. Matsuno, A. Oki, G. Dow, K. Kobayashi, D. Umemoto, M.E. Kim
{"title":"A monolithic GaAs HBT upconverter","authors":"A.Y. Umeda, C. T. Matsuno, A. Oki, G. Dow, K. Kobayashi, D. Umemoto, M.E. Kim","doi":"10.1109/MCS.1990.110943","DOIUrl":"https://doi.org/10.1109/MCS.1990.110943","url":null,"abstract":"A 2.6-GHz to 5.5-GHz upconverter mixer has been implemented with GaAs heterojunction bipolar transistor (HBT) IC technology. The upconverter consists of a transconductance multiplier based on a Gilbert cell topology, followed by a two-stage Darlington-coupled amplifier. Measured conversion gain is greater than 20 dB up to an RF output frequency of 5.5 GHz. This upconverter is believed to be the first reported using the GaAs HBT technology.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132951116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Rectification failure in GaAs MESFETs subjected to single pulses of intense microwave radiation 强微波单脉冲作用下GaAs mesfet的整流失效
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110936
J. McAdoo, W. M. Bollen, R. Seeley, W. Catoe, J. Frey
{"title":"Rectification failure in GaAs MESFETs subjected to single pulses of intense microwave radiation","authors":"J. McAdoo, W. M. Bollen, R. Seeley, W. Catoe, J. Frey","doi":"10.1109/MCS.1990.110936","DOIUrl":"https://doi.org/10.1109/MCS.1990.110936","url":null,"abstract":"An important mechanism for damage to GaAs microwave integrated circuits from single pulses of intense microwave radiation has been observed by the use of high-speed photography and optical and RF spectroscopy. This mechanism is named rectification failure because it transforms the Schottky junctions of the transistors to ohmic resistors. High-speed photography was used to clock the emission of optical radiation after the arrival of the high-power microwave pulse, optical spectroscopy was employed to determine the source of the optical emissions, and RF spectroscopy was applied to monitor the generation of harmonics of the incident radiation as a function of time during each test pulse. Devices tested included packaged low-noise amplifiers and power amplifiers. The tests proceeded by the direct injection of a single pulse of microwave radiation into the input port of the device. The pulses typically lasted for 100 ns. Testing would start at power levels too low to inflict damage and would proceed with successively higher power pulses until damage was observed. Devices were tested both with and without bias voltages applied. The results of the testing are presented.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125374818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 2.5 watt X-band high efficiency MMIC amplifier 2.5瓦x波段高效MMIC放大器
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110934
V. Hwang, Y. Shih, T. Chi, D. Wang
{"title":"A 2.5 watt X-band high efficiency MMIC amplifier","authors":"V. Hwang, Y. Shih, T. Chi, D. Wang","doi":"10.1109/MCS.1990.110934","DOIUrl":"https://doi.org/10.1109/MCS.1990.110934","url":null,"abstract":"A broadband two-stage X-band high-efficiency power amplifier using ion-implanted MMIC (monolithic microwave IC) technology is presented. The amplifier has 2.3-W to 2.9-W CW output power, 31% to 35% power-added efficiency, and 11-dB power gain across the frequency band. These data represent state-of-the-art performance for an MMIC amplifier. The amplifier design utilizes the waveform-balance nonlinear CAD. The optimum load impedances of the FETs for power matching are first generated by computer. These data are then used to optimize the matching circuits. The circuit is fabricated by the standard Hughes 0.5- mu m ion-implantation MMIC process. The doping profile is optimized for high breakdown voltage and transconductance. The amplifier is a true monolithic circuit since it does not use any offchip combining or tuning.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126802647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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