{"title":"采用四分之一微米GaAs mesfet和集成高q变容器的单片Ka波段压控振荡器","authors":"M. McDermott, C. Sweeney, M. Benedek, G. Dawe","doi":"10.1109/MCS.1990.110949","DOIUrl":null,"url":null,"abstract":"High-Q GaAs abrupt varactor diodes and 0.25- mu m GaAs MESFETs have been combined on a semiinsulating GaAs substrate for millimeter-wave monolithic IC applications. Based on the measured series resistance and capacitance, the diodes have a calculated Q at -4 V, 50 MHz of approximately 19000. The MESFETs have a measured gain of >6 dB at 35 GHz, with extrapolated values for f/sub t/ and f/sub max/ of 32 GHz and 78 GHz, respectively. A monolithic Ka-band voltage-controlled oscillator using these devices has been built and tested. Output powers of 60 mW with 70 MHz of tuning bandwidth and 40 mW with 120 MHz of tuning bandwidth have been measured at 32 GHz.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Monolithic Ka band VCO using quarter micron GaAs MESFETs and integrated high-Q varactors\",\"authors\":\"M. McDermott, C. Sweeney, M. Benedek, G. Dawe\",\"doi\":\"10.1109/MCS.1990.110949\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-Q GaAs abrupt varactor diodes and 0.25- mu m GaAs MESFETs have been combined on a semiinsulating GaAs substrate for millimeter-wave monolithic IC applications. Based on the measured series resistance and capacitance, the diodes have a calculated Q at -4 V, 50 MHz of approximately 19000. The MESFETs have a measured gain of >6 dB at 35 GHz, with extrapolated values for f/sub t/ and f/sub max/ of 32 GHz and 78 GHz, respectively. A monolithic Ka-band voltage-controlled oscillator using these devices has been built and tested. Output powers of 60 mW with 70 MHz of tuning bandwidth and 40 mW with 120 MHz of tuning bandwidth have been measured at 32 GHz.<<ETX>>\",\"PeriodicalId\":388492,\"journal\":{\"name\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-05-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1990.110949\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1990.110949","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monolithic Ka band VCO using quarter micron GaAs MESFETs and integrated high-Q varactors
High-Q GaAs abrupt varactor diodes and 0.25- mu m GaAs MESFETs have been combined on a semiinsulating GaAs substrate for millimeter-wave monolithic IC applications. Based on the measured series resistance and capacitance, the diodes have a calculated Q at -4 V, 50 MHz of approximately 19000. The MESFETs have a measured gain of >6 dB at 35 GHz, with extrapolated values for f/sub t/ and f/sub max/ of 32 GHz and 78 GHz, respectively. A monolithic Ka-band voltage-controlled oscillator using these devices has been built and tested. Output powers of 60 mW with 70 MHz of tuning bandwidth and 40 mW with 120 MHz of tuning bandwidth have been measured at 32 GHz.<>
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