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Miniature monolithic microwave frequency diplexers 微型单片微波频率双工器
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110938
K. Simon, M. Schindler, Y. Tajima, A. Bertrand
{"title":"Miniature monolithic microwave frequency diplexers","authors":"K. Simon, M. Schindler, Y. Tajima, A. Bertrand","doi":"10.1109/MCS.1990.110938","DOIUrl":"https://doi.org/10.1109/MCS.1990.110938","url":null,"abstract":"Two novel diplexers composed of active, lumped, and transversal element filters that have been developed as monolithic microwave ICs (MMICs) are described. One diplexer produces a low-pass cutoff band edge at 7.5 GHz and a high-pass turn-on band edge at 9 GHz, while the second diplexer produces two passbands, one from 12.5-13.5 GHz and the other from 15.5-16.5 GHz. These are the first reported active MMIC diplexers. Both diplexers have 30 dB of signal rejection 1.5 GHz from their band edges. The use of active transversal filters produces the high rejection characteristic and yields compact diplexers that can be used as building blocks in miniature microwave-frequency multiplexing applications.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123251678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaAs devices and the MIC applications in satellite broadcasting GaAs器件与MIC在卫星广播中的应用
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110925
Y. Konishi
{"title":"GaAs devices and the MIC applications in satellite broadcasting","authors":"Y. Konishi","doi":"10.1109/MCS.1990.110925","DOIUrl":"https://doi.org/10.1109/MCS.1990.110925","url":null,"abstract":"GaAs devices, such as low-noise high-electron-mobility transistors (HEMT), low-noise FET, and wideband UHF amplifiers. are used extensively for satellite broadcasting receivers, especially in LNBs (low-noise block downconverters). The Ku-band prescaler for nonadjusting local oscillators, the active bandpass filter for miniaturized filters, and the monolithic ICs for high-volume production have been developed recently. A summary of information on GaAs devices and the monolithic microwave ICs (MMICs) is presented. Opinions on the merits and future availability of MMICs and discrete circuits are given. The status of satellite broadcasting in Japan is discussed.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125717458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A compact broadband, six-bit MMIC phasor with integrated digital drivers 一个紧凑的宽带，6位MMIC相量与集成的数字驱动器
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110954
C. Moye, G. Sakamoto, M. Brand
{"title":"A compact broadband, six-bit MMIC phasor with integrated digital drivers","authors":"C. Moye, G. Sakamoto, M. Brand","doi":"10.1109/MCS.1990.110954","DOIUrl":"https://doi.org/10.1109/MCS.1990.110954","url":null,"abstract":"Digital and microwave technologies have been successfully combined on a single chip to realize a broadband, 6-b monolithic microwave IC (MMIC) phase shifter. It exhibits low insertion loss, good voltage standing wave ratio (VSWR), and exceptional phase performance with less than 3 degrees RMS phase error for all 64 phase states over the entire 7.2-10.2 GHz band. Compared to previous designs, the number of required control lines has been reduced by a factor of two due to the integration of the digital drive circuitry. Phase shifter and digital driver design, fabrication, and performance are described.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128294233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
A new concept to cancel insertion phase variation in MMIC amplitude controller 一种消除MMIC幅度控制器中插入相位变化的新概念
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110939
D. Roques, J. Cazaux, M. Pouysegur
{"title":"A new concept to cancel insertion phase variation in MMIC amplitude controller","authors":"D. Roques, J. Cazaux, M. Pouysegur","doi":"10.1109/MCS.1990.110939","DOIUrl":"https://doi.org/10.1109/MCS.1990.110939","url":null,"abstract":"A concept which keeps a very low insertion phase variation in an analog monolithic microwave IC (MMIC) amplitude controller is presented. This new approach, applicable to dual-gate FET (DGFET) variable-gain amplifiers, is to connect an active variable load to the second gate of the DGFET. This load makes use of a cold FET (with Vds=0 V) whose impedance varies depending on the amplitude command of the circuit. Then, the cold FET compensates the insertion phase change introduced by the DGFET attenuation control over a wide dynamic range. Based on this principle, a C-band GaAs MMIC attenuator for active antenna application has been designed. The phase variation versus gain is always lower than +or-2 degrees over a 20-dB gain/attenuation range.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130080237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
A low cost high performance MMIC low noise downconverter for direct broadcast satellite reception 用于卫星直播接收的低成本高性能MMIC低噪声下变频器
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110926
P. Wallace, R. Michels, J. Bayruns, S. B. Christiansen, N. Scheinberg, J. Wang, R. Goyal, M. Patel
{"title":"A low cost high performance MMIC low noise downconverter for direct broadcast satellite reception","authors":"P. Wallace, R. Michels, J. Bayruns, S. B. Christiansen, N. Scheinberg, J. Wang, R. Goyal, M. Patel","doi":"10.1109/MCS.1990.110926","DOIUrl":"https://doi.org/10.1109/MCS.1990.110926","url":null,"abstract":"A low-cost single-chip receiver designed for use as a direct-broadcast satellite (DBS) receiver operating over 11.7 to 12.2 GHz is described. The chip comprises a low-noise amplifier, an image filter, an active mixer, an IF filter, an IF amplifier, and a local oscillator, replacing about 50 discrete components in a typical outdoor DBS receiver. The unit is housed in a low-cost hermetic package and requires only a dielectric resonator for proper operation. With power supplies of +6 V and -5 V, the typical noise figure is about 5 dB, with a conversion gain of about 36 dB. The device is manufactured using a 0.5- mu m, buried p-layer GaAs MESFET IC process without substrate vias.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127405674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
A novel aperture-isolation circuit for use in phased array systems 一种用于相控阵系统的新型孔隔离电路
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110937
A. Jacomb-Hood, M. Booth, D. Houston, T.S. Alcorn
{"title":"A novel aperture-isolation circuit for use in phased array systems","authors":"A. Jacomb-Hood, M. Booth, D. Houston, T.S. Alcorn","doi":"10.1109/MCS.1990.110937","DOIUrl":"https://doi.org/10.1109/MCS.1990.110937","url":null,"abstract":"A novel electronically controlled matching network has been demonstrated as an aperture-isolation circuit. This approach offers smaller size, lower weight, and potentially lower cost than circulators. The circuit presently demonstrated has loss comparable to a circulator, however, in certain applications (e.g., lower frequency of operation) and with improved devices, it is anticipated that this approach will offer lower insertion loss than circulators. Monolithic microwave IC (MMIC)-compatible GaAs p-i-n diodes have demonstrated a cutoff frequency of 2.4 THz and a breakdown voltage of 95 V. The aperture-isolation MMIC was designed to match radiating element impedances with reflection coefficients of tip to 0.5 of any phase. The designed frequency band was 9.2-10.2 GHz. The vertical p-i-n diode structure, circuit design, and performance are described.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124344239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 10-14 GHz linear MMIC vector modulator with less than 0.1 dB and 0.8 degrees amplitude and phase error 一种10-14 GHz线性MMIC矢量调制器，振幅和相位误差小于0.1 dB, 0.8度
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110956
F.L.M. van den Bogaart, R. Pyndiah
{"title":"A 10-14 GHz linear MMIC vector modulator with less than 0.1 dB and 0.8 degrees amplitude and phase error","authors":"F.L.M. van den Bogaart, R. Pyndiah","doi":"10.1109/MCS.1990.110956","DOIUrl":"https://doi.org/10.1109/MCS.1990.110956","url":null,"abstract":"The design, fabrication, and performance of a GaAs monolithic linear vector modulator in the 10-14 GHz band is described. The circuit exhibits sideband and carrier rejections of more than 45 dB with third-order intermodulation signals at -40 dBc. Such performance has never been obtained in hybrid or monolithic technology. The design is based on symmetrical circuits. The vector modulator comprises two monolithic binary-phase-shift keying (PSK) modulators, a monolithic quadrature power divider, and a Wilkinson power combiner. The modulator is ideal for direct 16-quadrature amplitude modulation (QAM) in X-Ku-band digital radio links and satellite communications. Due to its linearity, amplitude, and phase precision, it has numerous applications, such as for an analog phase shifter for phased-array antennas or for a single-sideband up converter.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121541384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
A highly integrated two channel MMIC down converter with gain control 具有增益控制的高集成双通道MMIC下变频
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110927
J. Staudinger, W. Seely, J.M. Golio, B. Beckwith
{"title":"A highly integrated two channel MMIC down converter with gain control","authors":"J. Staudinger, W. Seely, J.M. Golio, B. Beckwith","doi":"10.1109/MCS.1990.110927","DOIUrl":"https://doi.org/10.1109/MCS.1990.110927","url":null,"abstract":"A complete MMIC (monolithic microwave IC) down converter with variable-gain control has been fabricated. A 6-8-GHz RF input signal is converted using a fixed 10-GHz LO (local oscillator), to a two-channel 2-4-GHz IF. The die is highly integrated, including an RF preamplifier, a double-balanced mixer, an LO amplifier, a power divider, IF amplification, and two voltage-controlled IF amplifiers which provide variable-gain adjustment. Back vias are utilized to establish grounding for both DC and RF. Probe pads are also included for measuring chip-level performance. A circuit description, the design techniques, and measured performance results are presented.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123972580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design and fabrication of two-pole monolithic bulk acoustic filters 双极单片体声滤波器的设计与制造
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110940
J. Rosenbaum, D. Dawson
{"title":"Design and fabrication of two-pole monolithic bulk acoustic filters","authors":"J. Rosenbaum, D. Dawson","doi":"10.1109/MCS.1990.110940","DOIUrl":"https://doi.org/10.1109/MCS.1990.110940","url":null,"abstract":"A new class of miniature monolithic filters has been fabricated in the 1-GHz to 1.5-GHz range. The devices are two-pole ladder filters which incorporate two inductors, a coupling capacitor, and two bulk acoustic resonators. They are characterized by small size and weight, low insertion loss (typically between 1 and 1.5 dB), narrow passbands (between 2 and 5%), and potentially very low cost. Filters have been fabricated on both high-resistivity silicon and semiinsulating gallium arsenide substrates. Fabrication is completely compatible with all monolithic microwave IC components, and thus integrating these devices with active components on the same wafer is a straightforward procedure.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122750837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
5 W monolithic HBT amplifier for broadband X-band applications 用于宽带x波段应用的5w单片HBT放大器
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110935
B. Bayraktaroglu, M. Khatibzadeh, R. Hudgens
{"title":"5 W monolithic HBT amplifier for broadband X-band applications","authors":"B. Bayraktaroglu, M. Khatibzadeh, R. Hudgens","doi":"10.1109/MCS.1990.110935","DOIUrl":"https://doi.org/10.1109/MCS.1990.110935","url":null,"abstract":"The first monolithic heterojunction bipolar transistor (HBT) amplifier producing greater than 5-W output power at X-band frequencies is reported. Monolithic impedance-matching circuits were designed using measured and modeled large-signal device parameters at the unit-cell level. Unit cells were then connected in parallel to obtain an output-power increase proportional to unit-cell count. A single-stage, totally monolithic amplifier was fabricated using 2.4-mm-emitter-length AlGaAs-GaAs HBT for operation in the 7-10-GHz frequency range. A maximum of 5.3-W CW output power was obtained in this frequency range with 4.6-dB gain and 22% power-added efficiency.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125774192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 37
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