{"title":"用于宽带x波段应用的5w单片HBT放大器","authors":"B. Bayraktaroglu, M. Khatibzadeh, R. Hudgens","doi":"10.1109/MCS.1990.110935","DOIUrl":null,"url":null,"abstract":"The first monolithic heterojunction bipolar transistor (HBT) amplifier producing greater than 5-W output power at X-band frequencies is reported. Monolithic impedance-matching circuits were designed using measured and modeled large-signal device parameters at the unit-cell level. Unit cells were then connected in parallel to obtain an output-power increase proportional to unit-cell count. A single-stage, totally monolithic amplifier was fabricated using 2.4-mm-emitter-length AlGaAs-GaAs HBT for operation in the 7-10-GHz frequency range. A maximum of 5.3-W CW output power was obtained in this frequency range with 4.6-dB gain and 22% power-added efficiency.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"37","resultStr":"{\"title\":\"5 W monolithic HBT amplifier for broadband X-band applications\",\"authors\":\"B. Bayraktaroglu, M. Khatibzadeh, R. Hudgens\",\"doi\":\"10.1109/MCS.1990.110935\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The first monolithic heterojunction bipolar transistor (HBT) amplifier producing greater than 5-W output power at X-band frequencies is reported. Monolithic impedance-matching circuits were designed using measured and modeled large-signal device parameters at the unit-cell level. Unit cells were then connected in parallel to obtain an output-power increase proportional to unit-cell count. A single-stage, totally monolithic amplifier was fabricated using 2.4-mm-emitter-length AlGaAs-GaAs HBT for operation in the 7-10-GHz frequency range. A maximum of 5.3-W CW output power was obtained in this frequency range with 4.6-dB gain and 22% power-added efficiency.<<ETX>>\",\"PeriodicalId\":388492,\"journal\":{\"name\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"37\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1990.110935\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1990.110935","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
5 W monolithic HBT amplifier for broadband X-band applications
The first monolithic heterojunction bipolar transistor (HBT) amplifier producing greater than 5-W output power at X-band frequencies is reported. Monolithic impedance-matching circuits were designed using measured and modeled large-signal device parameters at the unit-cell level. Unit cells were then connected in parallel to obtain an output-power increase proportional to unit-cell count. A single-stage, totally monolithic amplifier was fabricated using 2.4-mm-emitter-length AlGaAs-GaAs HBT for operation in the 7-10-GHz frequency range. A maximum of 5.3-W CW output power was obtained in this frequency range with 4.6-dB gain and 22% power-added efficiency.<>
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