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High-linearity, low DC power monolithic GaAs HBT broadband amplifiers to 11 GHz 11 GHz的高线性、低直流功率单片GaAs HBT宽带放大器
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110928
B. Nelson, D. Umemoto, C. Perry, R. Dixit, B. Allen, M.E. Kim, A. Oki
{"title":"High-linearity, low DC power monolithic GaAs HBT broadband amplifiers to 11 GHz","authors":"B. Nelson, D. Umemoto, C. Perry, R. Dixit, B. Allen, M.E. Kim, A. Oki","doi":"10.1109/MCS.1990.110928","DOIUrl":"https://doi.org/10.1109/MCS.1990.110928","url":null,"abstract":"Two broadband monolithic amplifiers based on GaAs heterojunction bipolar transistors (HBT) have been developed covering the 0.05-11-GHz frequency band. The hybrid designs reported by B.L. Nelson et al. (1989 IEEE GaAs IC Symp. Digest, Oct. 1989, p.79-82) have been successfully implemented with monolithic microwave IC (MMIC) technology. These amplifiers are the first reported balanced and distributed MMIC HBT amplifiers and represent a significant improvement over MESFET and HEMT approaches in high-linearity, low-DC-power performance for communication and electronic warfare applications. A 5-11-GHz MMIC balanced amplifier designed for high linearity produces +33-dBm third-order output intercept point (IP3) with 7.5-dB associated gain and less than 160-mW DC-power consumption. A 0.05-9-GHz distributed amplifier designed for low DC power and high gain consumes less than 50-mW and provides 6-10-dB gain at nominal bias. Device fabrication and characteristics are described.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131891289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 38
Implementation of RF/microwave receiver components on a semi-custom silicon bipolar array 射频/微波接收器元件在半定制硅双极阵列上的实现
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110941
K. Negus, J.N. Wholey
{"title":"Implementation of RF/microwave receiver components on a semi-custom silicon bipolar array","authors":"K. Negus, J.N. Wholey","doi":"10.1109/MCS.1990.110941","DOIUrl":"https://doi.org/10.1109/MCS.1990.110941","url":null,"abstract":"The analog transistor array starCHIP-1 has been developed for rapid, cost-effective design and delivery of many RF/microwave components for applications to 5 GHz. The array is based on silicon bipolar devices with 10-GHz f/sub T/. and 20-GHz f/sub max/ and thin-film polysilicon resistors with low parasitic capacitance and excellent matching. An overview of the array topology and technology is presented. The implementation of receiver functions and their measured results are illustrated with a frequency doubler, a vector demodulator, a limiting amplifier and a phase detector with an on-chip voltage-controlled oscillator. All these components are wideband, require no external baluns, have 50- Omega input and output impedance matching, and operate from a single 5-V power supply.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126406924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An MMIC amplifier for automatic level control applications 用于自动电平控制应用的MMIC放大器
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110942
K. Nary, R. Van Tuyl
{"title":"An MMIC amplifier for automatic level control applications","authors":"K. Nary, R. Van Tuyl","doi":"10.1109/MCS.1990.110942","DOIUrl":"https://doi.org/10.1109/MCS.1990.110942","url":null,"abstract":"An automatic gain control amplifier for automatically leveled output power, broadband, swept-frequency applications to 3 GHz has been developed. Consisting of a variable- pi attenuator, four additive-gain amplifier stages, a temperature-compensated peak detector, and an output buffer, the amplifier features a maximum leveled gain of 22 dB, a gain control range of 25 dB good input and output matches to 50 Omega , and suppressed second-harmonic distortion. It operates with +or-6-V power supplies and dissipates approximately 800 mW.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121141045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
5-100 GHz InP CPW MMIC 7-section distributed amplifier 5-100 GHz InP CPW MMIC 7段分布式放大器
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110932
R. Majidi-Ahy, M. Riaziat, C. Nishimoto, M. Glenn, S. Silverman, S. Weng, Y. Pao, G. Zdasiuk, S. Bandy, Z. Tan
{"title":"5-100 GHz InP CPW MMIC 7-section distributed amplifier","authors":"R. Majidi-Ahy, M. Riaziat, C. Nishimoto, M. Glenn, S. Silverman, S. Weng, Y. Pao, G. Zdasiuk, S. Bandy, Z. Tan","doi":"10.1109/MCS.1990.110932","DOIUrl":"https://doi.org/10.1109/MCS.1990.110932","url":null,"abstract":"The development of a single-stage 5-100-GHz InP monolithic microwave IC (MMIC) amplifier with an average gain of more than 5.0 dB is reported. This MMIC distributed amplifier has the highest frequency and bandwidth of operation (5-100 GHz) reported for wideband amplifiers. The active devices in this seven-section distributed amplifier are 0.1- mu m mushroom-gate InGaAs-InAlAs lattice-matched HEMTs on a semiinsulating InP substrate. Coplanar waveguide is the transmission medium for this 100-GHz MMIC with an overall chip dimension of 500 by 860 mu m. This is the first 100-GHz coplanar waveguide circuit on an InP substrate.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116589151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 54
Three channel IF multiplexers 三通道中频多路复用器
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110944
S. Thompson, Z. Lemnios, W. Guffey, A. Chamberlain, T. Robbio, W. Nelson
{"title":"Three channel IF multiplexers","authors":"S. Thompson, Z. Lemnios, W. Guffey, A. Chamberlain, T. Robbio, W. Nelson","doi":"10.1109/MCS.1990.110944","DOIUrl":"https://doi.org/10.1109/MCS.1990.110944","url":null,"abstract":"The first integration of multiple IF functions, into highly integrated GaAs monolithic microwave ICs (MMICs) for electronic warfare applications is described. The IF functions include amplifiers, switches, and attenuators combined into three-channel IF multiplexers. The multiplexers provide a three-channel selectivity and variable gain in each channel for application in wide-bandwidth, high-dynamic-range electronic warfare receivers.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125874624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz 高达60ghz的高增益、低噪声单片HEMT分布式放大器
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110930
C. Yuen, C. Nishimoto, M. Glenn, C. Webb, S. Bandy, G. Zdasiuk
{"title":"High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz","authors":"C. Yuen, C. Nishimoto, M. Glenn, C. Webb, S. Bandy, G. Zdasiuk","doi":"10.1109/MCS.1990.110930","DOIUrl":"https://doi.org/10.1109/MCS.1990.110930","url":null,"abstract":"Ultrabroad-bandwidth distributed amplifiers with cutoff frequencies of 45 to 60 GHz were developed using 0.25- mu m high-electron-mobility transistors (HEMTs) with a mushroom gate profile. Both single and cascode HEMTs were used as the active devices in the amplifiers. A measured gain as high as 10+or-1 dB from 5 to 50 GHz and a gain of 8+or-1 dB from 5 to 60 GHz, respectively, were achieved from amplifiers using cascode HEMTs. The measured noise figure for these amplifiers is approximately 3-4 dB in the Ka-band. The chip size is 2.3*0.9 mm. Device considerations, circuit design, monolithic IC fabrication, and the measured performance of the amplifiers are outlined.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125520197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
A high power 2-18 GHz T/R switch 大功率2- 18ghz收发开关
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI: 10.1109/MCS.1990.110953
M. Schindler, T. Kazior
{"title":"A high power 2-18 GHz T/R switch","authors":"M. Schindler, T. Kazior","doi":"10.1109/MCS.1990.110953","DOIUrl":"https://doi.org/10.1109/MCS.1990.110953","url":null,"abstract":"A high-power 2-18-GHz T/R (transmit/receive) switch monolithic microwave IC (MMIC) has been developed for use in broadband T/R modules. This switch has a power handling of better than 35 dBm (3.2 W), 8-dB higher than any previously reported broadband switch. A combination of techniques was used to yield higher power handling while preserving low loss and high isolation. These circuit techniques include an asymmetrical design of the transmit and receive arms, the use of dual-gate FETs for handling large voltages, and the use of large FET peripheries for handling large currents. The use of dual-gate FETs in place of a stack of individual FETs reduces the device area, with a resulting reduction in parasitic series inductance through the FET and in shunt capacitance from the FET to ground. Power handling is somewhat lower for the dual-gate FET than for conventional stacked FETs, since RF voltage cannot be distributed as uniformly across the gates. Offstate capacitance is higher for a dual-gate FET than for a stacked FET, since the close proximity of the elements leads to additional parasitic capacitances.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"31 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116674195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
European MMIC activities 欧洲MMIC活动
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI: 10.1109/MCS.1990.110945
J. Magarshack
{"title":"European MMIC activities","authors":"J. Magarshack","doi":"10.1109/MCS.1990.110945","DOIUrl":"https://doi.org/10.1109/MCS.1990.110945","url":null,"abstract":"A brief review is given of monolithic microwave integrated circuit (MMIC) development programs in Europe supported by the European Economic Community (EEC) and military administrations. Civil applications are presented, with examples from four leading European manufacturers of MMICs, namely, Plessey, Telefunken, Philips and Thomson-CSF.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129857318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An X-band monolithic double double-balanced mixer for high dynamic receiver application x波段单片双双平衡混频器，适用于高动态接收机
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI: 10.1109/MCS.1990.110952
T. Ton, G. Dow, T. Chen, M. Lacon, T.S. Lin, S. Bui, D. Yang
{"title":"An X-band monolithic double double-balanced mixer for high dynamic receiver application","authors":"T. Ton, G. Dow, T. Chen, M. Lacon, T.S. Lin, S. Bui, D. Yang","doi":"10.1109/MCS.1990.110952","DOIUrl":"https://doi.org/10.1109/MCS.1990.110952","url":null,"abstract":"An X-band monolithic double double-balanced mixer having Schottky barrier diodes fabricated with a MESFET process is described. This monolithic mixer demonstrates RF performance comparable to that of a hybridized mixer. The mixer achieves a high input IP/sub 3/ of 20 dBm and a 1-dB compression output power of 3.6 dBm at a 20-dBm local oscillator drive. The measured conversion loss is less than 10 dB from 7 to 10 GHz with an IF output frequency of 5 GHz. To the authors' knowledge, this represents the highest IP/sub 3/ performance among the reported monolithic mixers.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133880511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Broad band monolithic cross point switch matrices 宽带单片交叉点开关矩阵
IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1900-01-01 DOI: 10.1109/MCS.1990.110955
S. Powell, P. Becker, M. Dupuis, C. Nagy
{"title":"Broad band monolithic cross point switch matrices","authors":"S. Powell, P. Becker, M. Dupuis, C. Nagy","doi":"10.1109/MCS.1990.110955","DOIUrl":"https://doi.org/10.1109/MCS.1990.110955","url":null,"abstract":"A series of broadband monolithic switch matrices has been fabricated. Circuits covering DC to 18 GHz are described, including a 4 to 10-GHz fully monolithic 2 by 2 matrix on a single chip with 4-dB insertion loss and greater than 40-dB isolation. The circuits utilize a high-isolation microstrip crossover. The matrix approach uses orthogonal input and output lines with an independent switching element at each crosspoint. Only a small percent of the input signal is extracted at each crosspoint, so the input line can be continued to drive additional crosspoints. The light coupling from the lines requires the crosspoints to provide gain to prevent excessive insertion loss in the matrix. The switching element uses dual-gate FETs to provide both gain and isolation.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117261334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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