T. Ton, G. Dow, T. Chen, M. Lacon, T.S. Lin, S. Bui, D. Yang
{"title":"x波段单片双双平衡混频器，适用于高动态接收机","authors":"T. Ton, G. Dow, T. Chen, M. Lacon, T.S. Lin, S. Bui, D. Yang","doi":"10.1109/MCS.1990.110952","DOIUrl":null,"url":null,"abstract":"An X-band monolithic double double-balanced mixer having Schottky barrier diodes fabricated with a MESFET process is described. This monolithic mixer demonstrates RF performance comparable to that of a hybridized mixer. The mixer achieves a high input IP/sub 3/ of 20 dBm and a 1-dB compression output power of 3.6 dBm at a 20-dBm local oscillator drive. The measured conversion loss is less than 10 dB from 7 to 10 GHz with an IF output frequency of 5 GHz. To the authors' knowledge, this represents the highest IP/sub 3/ performance among the reported monolithic mixers.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"An X-band monolithic double double-balanced mixer for high dynamic receiver application\",\"authors\":\"T. Ton, G. Dow, T. Chen, M. Lacon, T.S. Lin, S. Bui, D. Yang\",\"doi\":\"10.1109/MCS.1990.110952\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An X-band monolithic double double-balanced mixer having Schottky barrier diodes fabricated with a MESFET process is described. This monolithic mixer demonstrates RF performance comparable to that of a hybridized mixer. The mixer achieves a high input IP/sub 3/ of 20 dBm and a 1-dB compression output power of 3.6 dBm at a 20-dBm local oscillator drive. The measured conversion loss is less than 10 dB from 7 to 10 GHz with an IF output frequency of 5 GHz. To the authors' knowledge, this represents the highest IP/sub 3/ performance among the reported monolithic mixers.<<ETX>>\",\"PeriodicalId\":388492,\"journal\":{\"name\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1990.110952\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1990.110952","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An X-band monolithic double double-balanced mixer for high dynamic receiver application
An X-band monolithic double double-balanced mixer having Schottky barrier diodes fabricated with a MESFET process is described. This monolithic mixer demonstrates RF performance comparable to that of a hybridized mixer. The mixer achieves a high input IP/sub 3/ of 20 dBm and a 1-dB compression output power of 3.6 dBm at a 20-dBm local oscillator drive. The measured conversion loss is less than 10 dB from 7 to 10 GHz with an IF output frequency of 5 GHz. To the authors' knowledge, this represents the highest IP/sub 3/ performance among the reported monolithic mixers.<>
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