5-100 GHz InP CPW MMIC 7-section distributed amplifier

IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI:10.1109/MCS.1990.110932

R. Majidi-Ahy, M. Riaziat, C. Nishimoto, M. Glenn, S. Silverman, S. Weng, Y. Pao, G. Zdasiuk, S. Bandy, Z. Tan

引用次数: 54

Abstract

The development of a single-stage 5-100-GHz InP monolithic microwave IC (MMIC) amplifier with an average gain of more than 5.0 dB is reported. This MMIC distributed amplifier has the highest frequency and bandwidth of operation (5-100 GHz) reported for wideband amplifiers. The active devices in this seven-section distributed amplifier are 0.1- mu m mushroom-gate InGaAs-InAlAs lattice-matched HEMTs on a semiinsulating InP substrate. Coplanar waveguide is the transmission medium for this 100-GHz MMIC with an overall chip dimension of 500 by 860 mu m. This is the first 100-GHz coplanar waveguide circuit on an InP substrate.<>

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5-100 GHz InP CPW MMIC 7段分布式放大器

报道了一种平均增益大于5.0 dB的单级5-100 ghz InP单片微波IC (MMIC)放大器的研制。该MMIC分布式放大器具有宽带放大器中最高的工作频率和带宽(5-100 GHz)。这个七段分布式放大器的有源器件是半绝缘InP衬底上的0.1 μ m蘑菇栅InGaAs-InAlAs晶格匹配hemt。共面波导是该100 ghz MMIC的传输介质，整体芯片尺寸为500 × 860 μ m，这是在InP衬底上的第一个100 ghz共面波导电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits

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