T. Ton, G. Dow, T. Chen, M. Lacon, T.S. Lin, S. Bui, D. Yang
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引用次数: 4
Abstract
An X-band monolithic double double-balanced mixer having Schottky barrier diodes fabricated with a MESFET process is described. This monolithic mixer demonstrates RF performance comparable to that of a hybridized mixer. The mixer achieves a high input IP/sub 3/ of 20 dBm and a 1-dB compression output power of 3.6 dBm at a 20-dBm local oscillator drive. The measured conversion loss is less than 10 dB from 7 to 10 GHz with an IF output frequency of 5 GHz. To the authors' knowledge, this represents the highest IP/sub 3/ performance among the reported monolithic mixers.<>