W. H. Perkins, N. Jansen, T. A. Midford, W. Niehaus, D. Reep, J. Tenedorio
{"title":"MIMIC technology transportability","authors":"W. H. Perkins, N. Jansen, T. A. Midford, W. Niehaus, D. Reep, J. Tenedorio","doi":"10.1109/MCS.1990.110946","DOIUrl":"https://doi.org/10.1109/MCS.1990.110946","url":null,"abstract":"A primary goal of the Defense Advanced Research Projects Agency's (DARPA) microwave and millimeter-wave monolithic integrated circuit (MIMIC) program is the demonstration of process-tolerant designs that can be fabricated in multiple facilities at affordable cost. A Hughes/General Electric team's experience with transporting the design and process for a C-band 3-W, two-stage amplifier is described. This amplifier, based on a mature GE design, is now being produced by the five team foundries (Hughes, GE, AT&T, Harris Microwave Semiconductor, and M/A-COM). Problem areas and their solutions are highlighted. The authors detail the cooperative exchange of technology which has enabled transport of this C-band MIMIC and describe the fabrication status, examine process variations, and compare data obtained.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133774760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Adelseck, J.M. Dieudonine, K. Schmegner, A. Colquhoun, G. Ebert, J. Selders
{"title":"A monolithic 94 GHz balanced mixer","authors":"B. Adelseck, J.M. Dieudonine, K. Schmegner, A. Colquhoun, G. Ebert, J. Selders","doi":"10.1109/MCS.1990.110951","DOIUrl":"https://doi.org/10.1109/MCS.1990.110951","url":null,"abstract":"On the basis of a recently developed GaAs technology which allows the realization of millimeter-wave Schottky mixer diodes and MESFETs on the same monolithic chip, different 94-GHz monolithic mixers have been fabricated. The Schottky diodes show cutoff frequencies of up to 2.3 THz. and MESFETs with typical F/sub max/ (MAG=1) of about 90 GHz have been measured. The mixer chips show conversion losses of less than 8 dB combined with noise figures below 6 dB (double sideband). The technology, mixer design, and measurement results are outlined.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130631449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}