B. Adelseck, J.M. Dieudonine, K. Schmegner, A. Colquhoun, G. Ebert, J. Selders
{"title":"一个单片94 GHz平衡混频器","authors":"B. Adelseck, J.M. Dieudonine, K. Schmegner, A. Colquhoun, G. Ebert, J. Selders","doi":"10.1109/MCS.1990.110951","DOIUrl":null,"url":null,"abstract":"On the basis of a recently developed GaAs technology which allows the realization of millimeter-wave Schottky mixer diodes and MESFETs on the same monolithic chip, different 94-GHz monolithic mixers have been fabricated. The Schottky diodes show cutoff frequencies of up to 2.3 THz. and MESFETs with typical F/sub max/ (MAG=1) of about 90 GHz have been measured. The mixer chips show conversion losses of less than 8 dB combined with noise figures below 6 dB (double sideband). The technology, mixer design, and measurement results are outlined.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A monolithic 94 GHz balanced mixer\",\"authors\":\"B. Adelseck, J.M. Dieudonine, K. Schmegner, A. Colquhoun, G. Ebert, J. Selders\",\"doi\":\"10.1109/MCS.1990.110951\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"On the basis of a recently developed GaAs technology which allows the realization of millimeter-wave Schottky mixer diodes and MESFETs on the same monolithic chip, different 94-GHz monolithic mixers have been fabricated. The Schottky diodes show cutoff frequencies of up to 2.3 THz. and MESFETs with typical F/sub max/ (MAG=1) of about 90 GHz have been measured. The mixer chips show conversion losses of less than 8 dB combined with noise figures below 6 dB (double sideband). The technology, mixer design, and measurement results are outlined.<<ETX>>\",\"PeriodicalId\":388492,\"journal\":{\"name\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1990.110951\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1990.110951","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the basis of a recently developed GaAs technology which allows the realization of millimeter-wave Schottky mixer diodes and MESFETs on the same monolithic chip, different 94-GHz monolithic mixers have been fabricated. The Schottky diodes show cutoff frequencies of up to 2.3 THz. and MESFETs with typical F/sub max/ (MAG=1) of about 90 GHz have been measured. The mixer chips show conversion losses of less than 8 dB combined with noise figures below 6 dB (double sideband). The technology, mixer design, and measurement results are outlined.<>
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