W. H. Perkins, N. Jansen, T. A. Midford, W. Niehaus, D. Reep, J. Tenedorio
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引用次数: 0
摘要
美国国防高级研究计划局(DARPA)微波和毫米波单片集成电路(MIMIC)项目的一个主要目标是演示可在多个设施中以可承受的成本制造的工艺公差设计。Hughes/General Electric团队介绍了c波段3w两级放大器的设计和工艺。这款放大器基于通用电气的成熟设计，目前由五家团队代工厂(休斯、通用电气、AT&T、哈里斯微波半导体和M/ a - com)生产。重点介绍了问题领域及其解决方案。作者详细介绍了使这种c波段MIMIC传输成为可能的技术合作交流，并描述了制造状态，检查了工艺变化，并比较了获得的数据。
A primary goal of the Defense Advanced Research Projects Agency's (DARPA) microwave and millimeter-wave monolithic integrated circuit (MIMIC) program is the demonstration of process-tolerant designs that can be fabricated in multiple facilities at affordable cost. A Hughes/General Electric team's experience with transporting the design and process for a C-band 3-W, two-stage amplifier is described. This amplifier, based on a mature GE design, is now being produced by the five team foundries (Hughes, GE, AT&T, Harris Microwave Semiconductor, and M/A-COM). Problem areas and their solutions are highlighted. The authors detail the cooperative exchange of technology which has enabled transport of this C-band MIMIC and describe the fabrication status, examine process variations, and compare data obtained.<>
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