P. Wallace, R. Michels, J. Bayruns, S. B. Christiansen, N. Scheinberg, J. Wang, R. Goyal, M. Patel
{"title":"用于卫星直播接收的低成本高性能MMIC低噪声下变频器","authors":"P. Wallace, R. Michels, J. Bayruns, S. B. Christiansen, N. Scheinberg, J. Wang, R. Goyal, M. Patel","doi":"10.1109/MCS.1990.110926","DOIUrl":null,"url":null,"abstract":"A low-cost single-chip receiver designed for use as a direct-broadcast satellite (DBS) receiver operating over 11.7 to 12.2 GHz is described. The chip comprises a low-noise amplifier, an image filter, an active mixer, an IF filter, an IF amplifier, and a local oscillator, replacing about 50 discrete components in a typical outdoor DBS receiver. The unit is housed in a low-cost hermetic package and requires only a dielectric resonator for proper operation. With power supplies of +6 V and -5 V, the typical noise figure is about 5 dB, with a conversion gain of about 36 dB. The device is manufactured using a 0.5- mu m, buried p-layer GaAs MESFET IC process without substrate vias.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"A low cost high performance MMIC low noise downconverter for direct broadcast satellite reception\",\"authors\":\"P. Wallace, R. Michels, J. Bayruns, S. B. Christiansen, N. Scheinberg, J. Wang, R. Goyal, M. Patel\",\"doi\":\"10.1109/MCS.1990.110926\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low-cost single-chip receiver designed for use as a direct-broadcast satellite (DBS) receiver operating over 11.7 to 12.2 GHz is described. The chip comprises a low-noise amplifier, an image filter, an active mixer, an IF filter, an IF amplifier, and a local oscillator, replacing about 50 discrete components in a typical outdoor DBS receiver. The unit is housed in a low-cost hermetic package and requires only a dielectric resonator for proper operation. With power supplies of +6 V and -5 V, the typical noise figure is about 5 dB, with a conversion gain of about 36 dB. The device is manufactured using a 0.5- mu m, buried p-layer GaAs MESFET IC process without substrate vias.<<ETX>>\",\"PeriodicalId\":388492,\"journal\":{\"name\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1990.110926\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1990.110926","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low cost high performance MMIC low noise downconverter for direct broadcast satellite reception
A low-cost single-chip receiver designed for use as a direct-broadcast satellite (DBS) receiver operating over 11.7 to 12.2 GHz is described. The chip comprises a low-noise amplifier, an image filter, an active mixer, an IF filter, an IF amplifier, and a local oscillator, replacing about 50 discrete components in a typical outdoor DBS receiver. The unit is housed in a low-cost hermetic package and requires only a dielectric resonator for proper operation. With power supplies of +6 V and -5 V, the typical noise figure is about 5 dB, with a conversion gain of about 36 dB. The device is manufactured using a 0.5- mu m, buried p-layer GaAs MESFET IC process without substrate vias.<>