{"title":"一种用于相控阵系统的新型孔隔离电路","authors":"A. Jacomb-Hood, M. Booth, D. Houston, T.S. Alcorn","doi":"10.1109/MCS.1990.110937","DOIUrl":null,"url":null,"abstract":"A novel electronically controlled matching network has been demonstrated as an aperture-isolation circuit. This approach offers smaller size, lower weight, and potentially lower cost than circulators. The circuit presently demonstrated has loss comparable to a circulator, however, in certain applications (e.g., lower frequency of operation) and with improved devices, it is anticipated that this approach will offer lower insertion loss than circulators. Monolithic microwave IC (MMIC)-compatible GaAs p-i-n diodes have demonstrated a cutoff frequency of 2.4 THz and a breakdown voltage of 95 V. The aperture-isolation MMIC was designed to match radiating element impedances with reflection coefficients of tip to 0.5 of any phase. The designed frequency band was 9.2-10.2 GHz. The vertical p-i-n diode structure, circuit design, and performance are described.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A novel aperture-isolation circuit for use in phased array systems\",\"authors\":\"A. Jacomb-Hood, M. Booth, D. Houston, T.S. Alcorn\",\"doi\":\"10.1109/MCS.1990.110937\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel electronically controlled matching network has been demonstrated as an aperture-isolation circuit. This approach offers smaller size, lower weight, and potentially lower cost than circulators. The circuit presently demonstrated has loss comparable to a circulator, however, in certain applications (e.g., lower frequency of operation) and with improved devices, it is anticipated that this approach will offer lower insertion loss than circulators. Monolithic microwave IC (MMIC)-compatible GaAs p-i-n diodes have demonstrated a cutoff frequency of 2.4 THz and a breakdown voltage of 95 V. The aperture-isolation MMIC was designed to match radiating element impedances with reflection coefficients of tip to 0.5 of any phase. The designed frequency band was 9.2-10.2 GHz. The vertical p-i-n diode structure, circuit design, and performance are described.<<ETX>>\",\"PeriodicalId\":388492,\"journal\":{\"name\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1990.110937\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1990.110937","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel aperture-isolation circuit for use in phased array systems
A novel electronically controlled matching network has been demonstrated as an aperture-isolation circuit. This approach offers smaller size, lower weight, and potentially lower cost than circulators. The circuit presently demonstrated has loss comparable to a circulator, however, in certain applications (e.g., lower frequency of operation) and with improved devices, it is anticipated that this approach will offer lower insertion loss than circulators. Monolithic microwave IC (MMIC)-compatible GaAs p-i-n diodes have demonstrated a cutoff frequency of 2.4 THz and a breakdown voltage of 95 V. The aperture-isolation MMIC was designed to match radiating element impedances with reflection coefficients of tip to 0.5 of any phase. The designed frequency band was 9.2-10.2 GHz. The vertical p-i-n diode structure, circuit design, and performance are described.<>