双极单片体声滤波器的设计与制造

J. Rosenbaum, D. Dawson
{"title":"双极单片体声滤波器的设计与制造","authors":"J. Rosenbaum, D. Dawson","doi":"10.1109/MCS.1990.110940","DOIUrl":null,"url":null,"abstract":"A new class of miniature monolithic filters has been fabricated in the 1-GHz to 1.5-GHz range. The devices are two-pole ladder filters which incorporate two inductors, a coupling capacitor, and two bulk acoustic resonators. They are characterized by small size and weight, low insertion loss (typically between 1 and 1.5 dB), narrow passbands (between 2 and 5%), and potentially very low cost. Filters have been fabricated on both high-resistivity silicon and semiinsulating gallium arsenide substrates. Fabrication is completely compatible with all monolithic microwave IC components, and thus integrating these devices with active components on the same wafer is a straightforward procedure.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design and fabrication of two-pole monolithic bulk acoustic filters\",\"authors\":\"J. Rosenbaum, D. Dawson\",\"doi\":\"10.1109/MCS.1990.110940\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new class of miniature monolithic filters has been fabricated in the 1-GHz to 1.5-GHz range. The devices are two-pole ladder filters which incorporate two inductors, a coupling capacitor, and two bulk acoustic resonators. They are characterized by small size and weight, low insertion loss (typically between 1 and 1.5 dB), narrow passbands (between 2 and 5%), and potentially very low cost. Filters have been fabricated on both high-resistivity silicon and semiinsulating gallium arsenide substrates. Fabrication is completely compatible with all monolithic microwave IC components, and thus integrating these devices with active components on the same wafer is a straightforward procedure.<<ETX>>\",\"PeriodicalId\":388492,\"journal\":{\"name\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1990.110940\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1990.110940","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

一种新型的微型单片滤波器在1 ghz到1.5 ghz范围内被制造出来。该装置是包含两个电感器、一个耦合电容器和两个体声谐振器的两极阶梯滤波器。它们的特点是体积小,重量轻,插入损耗低(通常在1到1.5 dB之间),通带窄(在2%到5%之间),并且成本可能非常低。滤波器已在高电阻硅和半绝缘砷化镓衬底上制备。制造与所有单片微波IC元件完全兼容,因此将这些器件与同一晶圆上的有源元件集成是一个简单的过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and fabrication of two-pole monolithic bulk acoustic filters
A new class of miniature monolithic filters has been fabricated in the 1-GHz to 1.5-GHz range. The devices are two-pole ladder filters which incorporate two inductors, a coupling capacitor, and two bulk acoustic resonators. They are characterized by small size and weight, low insertion loss (typically between 1 and 1.5 dB), narrow passbands (between 2 and 5%), and potentially very low cost. Filters have been fabricated on both high-resistivity silicon and semiinsulating gallium arsenide substrates. Fabrication is completely compatible with all monolithic microwave IC components, and thus integrating these devices with active components on the same wafer is a straightforward procedure.<>
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