{"title":"Design and fabrication of two-pole monolithic bulk acoustic filters","authors":"J. Rosenbaum, D. Dawson","doi":"10.1109/MCS.1990.110940","DOIUrl":null,"url":null,"abstract":"A new class of miniature monolithic filters has been fabricated in the 1-GHz to 1.5-GHz range. The devices are two-pole ladder filters which incorporate two inductors, a coupling capacitor, and two bulk acoustic resonators. They are characterized by small size and weight, low insertion loss (typically between 1 and 1.5 dB), narrow passbands (between 2 and 5%), and potentially very low cost. Filters have been fabricated on both high-resistivity silicon and semiinsulating gallium arsenide substrates. Fabrication is completely compatible with all monolithic microwave IC components, and thus integrating these devices with active components on the same wafer is a straightforward procedure.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1990.110940","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A new class of miniature monolithic filters has been fabricated in the 1-GHz to 1.5-GHz range. The devices are two-pole ladder filters which incorporate two inductors, a coupling capacitor, and two bulk acoustic resonators. They are characterized by small size and weight, low insertion loss (typically between 1 and 1.5 dB), narrow passbands (between 2 and 5%), and potentially very low cost. Filters have been fabricated on both high-resistivity silicon and semiinsulating gallium arsenide substrates. Fabrication is completely compatible with all monolithic microwave IC components, and thus integrating these devices with active components on the same wafer is a straightforward procedure.<>