A monolithic GaAs HBT upconverter

IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits Pub Date : 1990-05-07 DOI:10.1109/MCS.1990.110943

A.Y. Umeda, C. T. Matsuno, A. Oki, G. Dow, K. Kobayashi, D. Umemoto, M.E. Kim

引用次数: 13

Abstract

A 2.6-GHz to 5.5-GHz upconverter mixer has been implemented with GaAs heterojunction bipolar transistor (HBT) IC technology. The upconverter consists of a transconductance multiplier based on a Gilbert cell topology, followed by a two-stage Darlington-coupled amplifier. Measured conversion gain is greater than 20 dB up to an RF output frequency of 5.5 GHz. This upconverter is believed to be the first reported using the GaAs HBT technology.<>

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单片GaAs HBT上变频器

采用GaAs异质结双极晶体管(HBT)集成电路技术实现了2.6 ghz至5.5 ghz上变频混频器。上变频器由一个基于吉尔伯特单元拓扑的跨导倍增器组成，然后是一个两级达林顿耦合放大器。测量到的转换增益大于20db，射频输出频率为5.5 GHz。这种上变频器被认为是第一个使用GaAs HBT技术的上变频器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits

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