{"title":"单片9至70 GHz分布式放大器","authors":"N. Camilleri, P. Chye, A. Lee, P. Gregory","doi":"10.1109/MCS.1990.110931","DOIUrl":null,"url":null,"abstract":"Multioctave monolithic GaAs pseudomorphic high-electron-mobility transistor (HEMT) amplifiers have been developed to operate from 9 to 70 GHz. These amplifiers make use of state-of-the-art HEMT devices of less than 0.2 mu m. Typical performance for a distributed amplifier using a 75- mu m device is 4 dB of gain with 0.5-dB peak-to-peak ripple and a maximum noise figure of 7 dB across the 9 to 70-GHz band. Monolithic distributed amplifier design with capacitive gate coupling is described.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Monolithic 9 to 70 GHz distributed amplifier\",\"authors\":\"N. Camilleri, P. Chye, A. Lee, P. Gregory\",\"doi\":\"10.1109/MCS.1990.110931\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multioctave monolithic GaAs pseudomorphic high-electron-mobility transistor (HEMT) amplifiers have been developed to operate from 9 to 70 GHz. These amplifiers make use of state-of-the-art HEMT devices of less than 0.2 mu m. Typical performance for a distributed amplifier using a 75- mu m device is 4 dB of gain with 0.5-dB peak-to-peak ripple and a maximum noise figure of 7 dB across the 9 to 70-GHz band. Monolithic distributed amplifier design with capacitive gate coupling is described.<<ETX>>\",\"PeriodicalId\":388492,\"journal\":{\"name\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1990.110931\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1990.110931","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multioctave monolithic GaAs pseudomorphic high-electron-mobility transistor (HEMT) amplifiers have been developed to operate from 9 to 70 GHz. These amplifiers make use of state-of-the-art HEMT devices of less than 0.2 mu m. Typical performance for a distributed amplifier using a 75- mu m device is 4 dB of gain with 0.5-dB peak-to-peak ripple and a maximum noise figure of 7 dB across the 9 to 70-GHz band. Monolithic distributed amplifier design with capacitive gate coupling is described.<>
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