{"title":"倍频带11瓦功率放大器MMIC","authors":"J. Komiak","doi":"10.1109/MCS.1990.110933","DOIUrl":null,"url":null,"abstract":"The design and performance of a two-stage 3.0-6.0 GHz MMIC (monolithic microwave IC) power amplifier that has established a new standard for power output and bandwidth in MMIC form is reported. The amplifier produces 11 W+or-1 dB from 3.0 to 6.0 GHz, with maximum power outputs of 13.5 W and 10.5 W at the respective S and C radar bands, and a minimum power of 9 W. This benchmark eclipses the best power level reported earlier for both two-stage (8 W at C-band) and single-stage (10 W at C-band) narrowband MMIC power amplifiers with a continuous bandwidth coverage of 67%. The yield of this MMIC, based upon 0.5- mu m gate-length selective-implant MESFET technology, averaged 43%, with a 57% yield from the best wafer.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Octave band eleven watt power amplifier MMIC\",\"authors\":\"J. Komiak\",\"doi\":\"10.1109/MCS.1990.110933\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and performance of a two-stage 3.0-6.0 GHz MMIC (monolithic microwave IC) power amplifier that has established a new standard for power output and bandwidth in MMIC form is reported. The amplifier produces 11 W+or-1 dB from 3.0 to 6.0 GHz, with maximum power outputs of 13.5 W and 10.5 W at the respective S and C radar bands, and a minimum power of 9 W. This benchmark eclipses the best power level reported earlier for both two-stage (8 W at C-band) and single-stage (10 W at C-band) narrowband MMIC power amplifiers with a continuous bandwidth coverage of 67%. The yield of this MMIC, based upon 0.5- mu m gate-length selective-implant MESFET technology, averaged 43%, with a 57% yield from the best wafer.<<ETX>>\",\"PeriodicalId\":388492,\"journal\":{\"name\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1990.110933\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1990.110933","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The design and performance of a two-stage 3.0-6.0 GHz MMIC (monolithic microwave IC) power amplifier that has established a new standard for power output and bandwidth in MMIC form is reported. The amplifier produces 11 W+or-1 dB from 3.0 to 6.0 GHz, with maximum power outputs of 13.5 W and 10.5 W at the respective S and C radar bands, and a minimum power of 9 W. This benchmark eclipses the best power level reported earlier for both two-stage (8 W at C-band) and single-stage (10 W at C-band) narrowband MMIC power amplifiers with a continuous bandwidth coverage of 67%. The yield of this MMIC, based upon 0.5- mu m gate-length selective-implant MESFET technology, averaged 43%, with a 57% yield from the best wafer.<>
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