P. Mcnally, T. Smith, F. Phelleps, K. M. Hogan, B. Smith, H. Deitrich
{"title":"使用MeV离子注入埋层背触点的Ku和k波段GaAs MMIC变容调谐FET振荡器","authors":"P. Mcnally, T. Smith, F. Phelleps, K. M. Hogan, B. Smith, H. Deitrich","doi":"10.1109/MCS.1990.110950","DOIUrl":null,"url":null,"abstract":"An all ion-implant, planar process has been used to fabricate high-Q hyperabrupt carrier profile varactor diodes for use in GaAs monolithic microwave IC (MMIC) voltage-controlled oscillators (VCOs) with the state-of-the-art performance. These GaAs varactor-tuned FET oscillators operate at up to 24 GHz with a tuning bandwidth of 5 GHz in K-band. The high-Q varactors feature a buried N/sup +/ layer created by ion-implantation at up to 6 MeV. Separately masked implanted N/sup +/ areas connect the buried layer to ohmic contacts at the surface. A varactor f/sub c/ of 1600 GHz was obtained at 0.09 pF. The design, fabrication, and measurements of varactors and MMIC VCOs are described.<<ETX>>","PeriodicalId":388492,"journal":{"name":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","volume":"129 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Ku- and K-band GaAs MMIC varactor-tuned FET oscillators using MeV ion-implanted buried-layer back contacts\",\"authors\":\"P. Mcnally, T. Smith, F. Phelleps, K. M. Hogan, B. Smith, H. Deitrich\",\"doi\":\"10.1109/MCS.1990.110950\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An all ion-implant, planar process has been used to fabricate high-Q hyperabrupt carrier profile varactor diodes for use in GaAs monolithic microwave IC (MMIC) voltage-controlled oscillators (VCOs) with the state-of-the-art performance. These GaAs varactor-tuned FET oscillators operate at up to 24 GHz with a tuning bandwidth of 5 GHz in K-band. The high-Q varactors feature a buried N/sup +/ layer created by ion-implantation at up to 6 MeV. Separately masked implanted N/sup +/ areas connect the buried layer to ohmic contacts at the surface. A varactor f/sub c/ of 1600 GHz was obtained at 0.09 pF. The design, fabrication, and measurements of varactors and MMIC VCOs are described.<<ETX>>\",\"PeriodicalId\":388492,\"journal\":{\"name\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"129 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1990.110950\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1990.110950","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ku- and K-band GaAs MMIC varactor-tuned FET oscillators using MeV ion-implanted buried-layer back contacts
An all ion-implant, planar process has been used to fabricate high-Q hyperabrupt carrier profile varactor diodes for use in GaAs monolithic microwave IC (MMIC) voltage-controlled oscillators (VCOs) with the state-of-the-art performance. These GaAs varactor-tuned FET oscillators operate at up to 24 GHz with a tuning bandwidth of 5 GHz in K-band. The high-Q varactors feature a buried N/sup +/ layer created by ion-implantation at up to 6 MeV. Separately masked implanted N/sup +/ areas connect the buried layer to ohmic contacts at the surface. A varactor f/sub c/ of 1600 GHz was obtained at 0.09 pF. The design, fabrication, and measurements of varactors and MMIC VCOs are described.<>
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