Octave band eleven watt power amplifier MMIC

J. Komiak
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引用次数: 9

Abstract

The design and performance of a two-stage 3.0-6.0 GHz MMIC (monolithic microwave IC) power amplifier that has established a new standard for power output and bandwidth in MMIC form is reported. The amplifier produces 11 W+or-1 dB from 3.0 to 6.0 GHz, with maximum power outputs of 13.5 W and 10.5 W at the respective S and C radar bands, and a minimum power of 9 W. This benchmark eclipses the best power level reported earlier for both two-stage (8 W at C-band) and single-stage (10 W at C-band) narrowband MMIC power amplifiers with a continuous bandwidth coverage of 67%. The yield of this MMIC, based upon 0.5- mu m gate-length selective-implant MESFET technology, averaged 43%, with a 57% yield from the best wafer.<>
倍频带11瓦功率放大器MMIC
介绍了一种两级3.0-6.0 GHz单片微波IC (MMIC)功率放大器的设计和性能,为MMIC形式的功率输出和带宽建立了新的标准。该放大器在3.0至6.0 GHz范围内产生11w +or- 1db,在S和C雷达波段的最大输出功率分别为13.5 W和10.5 W,最小功率为9w。该基准超过了之前报道的两级(c波段8 W)和单级(c波段10 W)窄带MMIC功率放大器的最佳功率水平,连续带宽覆盖率为67%。基于0.5 μ m栅极长度选择性植入MESFET技术的MMIC产率平均为43%,最佳晶圆产率为57%。
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