Lithography Asia最新文献_第2页

After development inspection (ADI) studies of photo resist defectivity of an advanced memory device 显影检验(ADI)研究了一种先进存储器件的光抗蚀剂缺陷

Lithography Asia Pub Date : 2009-12-03 DOI: 10.1117/12.837103

Hyung-Seop Kim, Yong Min Cho, Byoung-ho Lee, Roland Yeh, E. Ma, Fei Wang, Yan Zhao, K. Kanai, Hong Xiao, J. Jau

引用次数: 1

Abbe-PCA-SMO: microlithography source and mask optimization based on Abbe-PCA Abbe-PCA- smo:基于Abbe-PCA的微光刻源和掩模优化

Lithography Asia Pub Date : 2009-12-03 DOI: 10.1117/12.837686

Shi-Jei Chang, C. C. Chen, L. Melvin

引用次数: 8

Immersion and dry lithography monitoring for flash memories (after develop inspection and photo cell monitor) using a darkfield imaging inspector with advanced binning technology 浸没和干式光刻监测闪存(显影后检查和光电池监视器)使用暗场成像检查先进的分束技术

Lithography Asia Pub Date : 2009-12-03 DOI: 10.1117/12.835839

P. Parisi, A. Mani, C. Perry-Sullivan, J. Kopp, G. Simpson, M. Renis, M. Padovani, C. Severgnini, P. Piacentini, P. Piazza, A. Beccalli

{"title":"Immersion and dry lithography monitoring for flash memories (after develop inspection and photo cell monitor) using a darkfield imaging inspector with advanced binning technology","authors":"P. Parisi, A. Mani, C. Perry-Sullivan, J. Kopp, G. Simpson, M. Renis, M. Padovani, C. Severgnini, P. Piacentini, P. Piazza, A. Beccalli","doi":"10.1117/12.835839","DOIUrl":"https://doi.org/10.1117/12.835839","url":null,"abstract":"After-develop inspection (ADI) and photo-cell monitoring (PM) are part of a comprehensive lithography process monitoring strategy. Capturing defects of interest (DOI) in the lithography cell rather than at later process steps shortens the cycle time and allows for wafer re-work, reducing overall cost and improving yield. Low contrast DOI and multiple noise sources make litho inspection challenging. Broadband brightfield inspectors provide the highest sensitivity to litho DOI and are traditionally used for ADI and PM. However, a darkfield imaging inspector has shown sufficient sensitivity to litho DOI, providing a high-throughput option for litho defect monitoring. On the darkfield imaging inspector, a very high sensitivity inspection is used in conjunction with advanced defect binning to detect pattern issues and other DOI and minimize nuisance defects. For ADI, this darkfield inspection methodology enables the separation and tracking of 'color variation' defects that correlate directly to CD variations allowing a high-sampling monitor for focus excursions, thereby reducing scanner re-qualification time. For PM, the darkfield imaging inspector provides sensitivity to critical immersion litho defects at a lower cost-of-ownership. This paper describes litho monitoring methodologies developed and implemented for flash devices for 65nm production and 45nm development using the darkfield imaging inspector.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129520637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Durability of self-standing resist sheet composed with micro holes 由微孔组成的自立抗蚀板的耐久性

Lithography Asia Pub Date : 2009-12-03 DOI: 10.1117/12.841091

A. Takano, A. Kawai

引用次数: 6

Filtration condition study for enhanced microbridge reduction 增强微桥还原的过滤条件研究

Lithography Asia Pub Date : 2009-12-03 DOI: 10.1117/12.837664

T. Umeda, Fumi Watanabe, S. Tsuzuki, T. Numaguchi

{"title":"Filtration condition study for enhanced microbridge reduction","authors":"T. Umeda, Fumi Watanabe, S. Tsuzuki, T. Numaguchi","doi":"10.1117/12.837664","DOIUrl":"https://doi.org/10.1117/12.837664","url":null,"abstract":"Filtration products utilizing Nylon 6,6 membrane technology have demonstrated effectiveness in reducing microbridge defects in DUV photoresist patterning. The effects of fluid flow characteristics on defect reduction using a point-of-use Nylon 6,6 filtration product are explored. Lower filtration pressure and longer contact time were found to enhance the removal of gel-like microbridge defect precursors during point-of-use filtration of photoresist polymer solution. A kinetic study of high-pressure filtration, where a strong dependency of gel removal on contact time is observed, revealed the gel-like precursors are adsorbed to a greater extent at sites of polar Nylon 6,6 throughout the membrane depth. A study of gel capturing position by ICP-MS for low-pressure filtration, where gel removal is independent of contact time, revealed the gels are captured at the inlet portion of the filter, due to smaller transportation force, as compared to deeper into the filter media depth. These findings will be very useful both in optimizing filter operating procedures and in the development of next-generation filtration products, ultimately contributing toward reduced defectivity and increased yield within next-generation lithography processes.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"213 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123502931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 14

The synthesis and imaging study of a series of novel photoactive polymers with diazoketo groups in their side chains 一系列具有侧链重氮酮基团的新型光活性聚合物的合成和成像研究

Lithography Asia Pub Date : 2009-12-03 DOI: 10.1117/12.839549

Lu Liu, Yingquan Zou, Yuchun Yang, Yong Huang, Qisheng Liu, Huinan Niu

{"title":"The synthesis and imaging study of a series of novel photoactive polymers with diazoketo groups in their side chains","authors":"Lu Liu, Yingquan Zou, Yuchun Yang, Yong Huang, Qisheng Liu, Huinan Niu","doi":"10.1117/12.839549","DOIUrl":"https://doi.org/10.1117/12.839549","url":null,"abstract":"A kind of photoactive polymer with diazoketo groups in its side chains has been reported in SPIE and other related papers, and this photoactive polymer can be used in deep UV non-CARs (non-chemically amplified resists) system. Based on the work above, a series of novel photoactive monomers with substituents like phenyl, p-methylphenyl, p-methoxyphenyl, p-dimethylaminophenyl on the end of the molecule are designed and synthesized. By changing their substituents, the maximum-absorption wavelength of the photoactive monomers has been moved to 356nm, and it still has comparatively large absorption at 365nm (I-line). A series of photoactive polymers were obtained by polymerizing the monomer with methyl methacrylate and 2-hydroxyethyl methacrylate together. Upon irradiaton in the waveleng of 365nm, the diazoketo groups which are in the side chains of the photoactive polymers undergo the wolff rearrangment and afford ketens that react with water to provide base-soluble photoproducts. Applying this kind of photoactive polymers to non-CARs, a positive image can be obtained. This kind of photoactive polymers have great value in I-line non-CARs, TFT-LCD and IC discrete devices processing. And its anti-dry etching ability is enhanced by the introduction of the benzene ring.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114560508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Heat conduction from hot plate to photoresist on top of wafer including heat loss to the environment 从热板到晶圆片顶部光刻胶的热传导，包括对环境的热损失

Lithography Asia Pub Date : 2009-12-03 DOI: 10.1117/12.837236

Mi-Rim Jung, Sarah Kim, Do Wan Kim, Hye-keun Oh

{"title":"Heat conduction from hot plate to photoresist on top of wafer including heat loss to the environment","authors":"Mi-Rim Jung, Sarah Kim, Do Wan Kim, Hye-keun Oh","doi":"10.1117/12.837236","DOIUrl":"https://doi.org/10.1117/12.837236","url":null,"abstract":"Post exposure bake (PEB) process among the lithography steps is important for making good patterns when the chemically amplified resist is used. During the PEB, the de-protection reaction and the acid diffusion are determined by bake temperature and time. One of the key factors that determine the de-protection and acid diffusion is the initial temperature rising inside the photoresist. The time delay due to the temperature rising from the room temperature to the pre-set bake temperature is the main cause of line width variation. It is very important to control 1~2 nm line width variation for patterns of 32 nm and below. This variation mainly comes from PEB temperature and time of the resist on top of the multi-stacking silicon wafer on hot plate. In order to predict the accurate PEB temperature and time applied to the resist, we studied heat transfer from hot plate to the resist on top of the silicon wafer. We calculated boundary temperature values of each layer and compared the change of temperature caused by different kinds and thicknesses of sublayers including antireflection coating and resist. In order to predict bake temperature, we have to consider the heat loss which was made by the temperature differences with surrounding air, conductivity difference of various layer, and nitrogen purge during the PEB process. Therefore, heat loss to the environment is included to solve real heat conduction problem in the hot plate of the track system. We also found that the resultant line width was changed by small temperature variation, stack thickness and layer numbers.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114008686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Study of OPC accuracy by illumination source types 光源类型对OPC精度的影响研究

Lithography Asia Pub Date : 2009-12-03 DOI: 10.1117/12.837224

Kiho Yang, Daejin Park, Jeonkyu Lee, Sang-jin Oh, Jin-hyuck Jeon, Taejun You, Chan-ha Park, D. Yim, Sung-ki Park

{"title":"Study of OPC accuracy by illumination source types","authors":"Kiho Yang, Daejin Park, Jeonkyu Lee, Sang-jin Oh, Jin-hyuck Jeon, Taejun You, Chan-ha Park, D. Yim, Sung-ki Park","doi":"10.1117/12.837224","DOIUrl":"https://doi.org/10.1117/12.837224","url":null,"abstract":"The study of OPC (Optical Proximity Correction) model that well predict the wafer result has been researched. As the pattern design shrink down, the need for the CD (Critical Dimension) controllability increased more than before. To achieve these requirements, OPC models must be accurate for full chip process and model inaccuracies are one of several factors which contribute to errors in the final wafer image. For that reason, robust OPC using real lithographic terms was proposed. Real lithographic system is quite different from ideal system that is used for OPC modeling. Until now, this difference was acceptable since pattern size used for OPC model was large, but as device size shrinks, this gap between ideal and real system causes degradation of OPC accuracy. So, various optical parameters such as apodization, laser band width, degree of polarization, illumination are used today in order to compensate for this issue. Especially, major issue in modeling error is related to how the illumination source is used. For this study we assess accuracy of optical model for robust OPC using ideal and actual illumination sources, and test conditions are as follows: 1) We examined the difference of pupil types to output model respectively; 2) A parameterized test pattern layout was used by 1D test pattern types that have various lines and spaces; 3) All models were calculated in automation method so as to exclude the dependency of user skills; 4) OPC accuracies were examined by gate layer patterns on full chip level. The study is performed for 5X~4Xnm nodes lithographic processes. The main focus of the study was on usability of model that is made by measured source data in semiconductor manufacturing. Results clearly showed that the actual source for the optical model has merits and demerits.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124152954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Source-mask selection using computational lithography: further investigation incorporating rigorous resist models 使用计算光刻技术选择源掩模:结合严格抗蚀模型的进一步研究

Lithography Asia Pub Date : 2009-12-03 DOI: 10.1117/12.837201

S. Kapasi, S. Robertson, J. Biafore, Mark D. Smith

{"title":"Source-mask selection using computational lithography: further investigation incorporating rigorous resist models","authors":"S. Kapasi, S. Robertson, J. Biafore, Mark D. Smith","doi":"10.1117/12.837201","DOIUrl":"https://doi.org/10.1117/12.837201","url":null,"abstract":"Recent publications have emphasized the criticality of computational lithography in source-mask selection for 32 and 22 nm technology nodes. Lithographers often select the illuminator geometries based on analyzing aerial images for a limited set of structures using computational lithography tools. Last year, Biafore, et al1 demonstrated the divergence between aerial image models and resist models in computational lithography. In a follow-up study2, it was illustrated that optimal illuminator is different when selected based on resist model in contrast to aerial image model. In the study, optimal source shapes were evaluated for 1D logic patterns using aerial image model and two distinct commercial resist models. Physics based lumped parameter resist model (LPM) was used. Accurately calibrated full physical models are portable across imaging conditions compared to the lumped models. This study will be an extension of previous work. Full physical resist models (FPM) with calibrated resist parameters3,4,5,6 will be used in selecting optimum illumination geometries for 1D logic patterns. Several imaging parameters - like Numerical Aperture (NA), source geometries (Annular, Quadrupole, etc.), illumination configurations for different sizes and pitches will be explored in the study. Our goal is to compare and analyze the optimal source-shapes across various imaging conditions. In the end, the optimal source-mask solution for given set of designs based on all the models will be recommended.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115580348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A sophisticated metrology solution for advanced lithography: addressing the most stringent needs of today as well as future lithography 先进光刻技术的精密计量解决方案:满足当今以及未来光刻技术最严格的需求

Lithography Asia Pub Date : 2009-12-03 DOI: 10.1117/12.837353

Victor Shih, Jacky Huang, Willie Wang, G. Huang, H. Chung, A. Ho, W. Yang, Sophia Wang, C. Ke, L. J. Chen, C. Liang, H. H. Liu, H. J. Lee, L. G. Terng, T. Gau, John C. Lin, K. Bhattacharyya, M. van der Schaar, N. Wright, M. Shahrjerdy, V. Wang, Spencer Lin, Jon Wu, S. Peng, Dennis Chang, Cathy Wang, A. Fuchs, O. Adam, Karel van der Mast

{"title":"A sophisticated metrology solution for advanced lithography: addressing the most stringent needs of today as well as future lithography","authors":"Victor Shih, Jacky Huang, Willie Wang, G. Huang, H. Chung, A. Ho, W. Yang, Sophia Wang, C. Ke, L. J. Chen, C. Liang, H. H. Liu, H. J. Lee, L. G. Terng, T. Gau, John C. Lin, K. Bhattacharyya, M. van der Schaar, N. Wright, M. Shahrjerdy, V. Wang, Spencer Lin, Jon Wu, S. Peng, Dennis Chang, Cathy Wang, A. Fuchs, O. Adam, Karel van der Mast","doi":"10.1117/12.837353","DOIUrl":"https://doi.org/10.1117/12.837353","url":null,"abstract":"Advanced lithography is becoming increasingly demanding when speed and sophistication in communication between litho and metrology (feedback control) are most crucial. Overall requirements are so extreme that all measures must be taken in order to meet them. This is directly driving the metrology resolution, precision and matching needs in to deep sub-nanometer level [4]. Keeping the above in mind, a new scatterometry-based platform is under development at ASML. Authors have already published results of a thorough investigation of this promising new metrology technique which showed excellent results on resolution, precision and matching for overlay, as well as basic and advanced capabilities for CD [1], [2], [3]. In this technical presentation the authors will report the newest results from this ASML platform. This new work was divided in two sections: monitor wafer applications (scanner control - overlay, CD and focus) and product wafer applications.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"4 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121926292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10