显影检验(ADI)研究了一种先进存储器件的光抗蚀剂缺陷

Lithography Asia Pub Date : 2009-12-03 DOI:10.1117/12.837103

Hyung-Seop Kim, Yong Min Cho, Byoung-ho Lee, Roland Yeh, E. Ma, Fei Wang, Yan Zhao, K. Kanai, Hong Xiao, J. Jau

{"title":"显影检验(ADI)研究了一种先进存储器件的光抗蚀剂缺陷","authors":"Hyung-Seop Kim, Yong Min Cho, Byoung-ho Lee, Roland Yeh, E. Ma, Fei Wang, Yan Zhao, K. Kanai, Hong Xiao, J. Jau","doi":"10.1117/12.837103","DOIUrl":null,"url":null,"abstract":"In this study, a 3x-nm after development inspection (ADI) wafer with focus exposure matrix (FEM) was inspected with both an advanced optical system and an advanced EBI system, and the inspection results were carefully examined. We found that EBI can capture much more defects than optical system and it also can provide more information about within reticle shot defect distribution. It has high capture rate of certain critical defects that are insensitive to optical system, such as nano-bridges.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"136 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"After development inspection (ADI) studies of photo resist defectivity of an advanced memory device\",\"authors\":\"Hyung-Seop Kim, Yong Min Cho, Byoung-ho Lee, Roland Yeh, E. Ma, Fei Wang, Yan Zhao, K. Kanai, Hong Xiao, J. Jau\",\"doi\":\"10.1117/12.837103\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, a 3x-nm after development inspection (ADI) wafer with focus exposure matrix (FEM) was inspected with both an advanced optical system and an advanced EBI system, and the inspection results were carefully examined. We found that EBI can capture much more defects than optical system and it also can provide more information about within reticle shot defect distribution. It has high capture rate of certain critical defects that are insensitive to optical system, such as nano-bridges.\",\"PeriodicalId\":383504,\"journal\":{\"name\":\"Lithography Asia\",\"volume\":\"136 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Lithography Asia\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.837103\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Lithography Asia","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.837103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文采用先进的光学系统和先进的EBI系统对带有聚焦曝光矩阵(FEM)的3 -nm显影后检测(ADI)晶圆进行了检测，并对检测结果进行了仔细的检验。我们发现EBI能捕捉到比光学系统更多的缺陷，也能提供更多的关于瞄准针内部缺陷分布的信息。它对某些对光学系统不敏感的关键缺陷，如纳米桥，具有很高的捕获率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

After development inspection (ADI) studies of photo resist defectivity of an advanced memory device

In this study, a 3x-nm after development inspection (ADI) wafer with focus exposure matrix (FEM) was inspected with both an advanced optical system and an advanced EBI system, and the inspection results were carefully examined. We found that EBI can capture much more defects than optical system and it also can provide more information about within reticle shot defect distribution. It has high capture rate of certain critical defects that are insensitive to optical system, such as nano-bridges.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Lithography Asia

自引率

0.00%

发文量