Lithography Asia最新文献

Fabrication of diamond and diamond-like carbon molds for nano-imprinting lithography 纳米压印光刻用金刚石及类金刚石碳模的制造

Lithography Asia Pub Date : 2009-12-14 DOI: 10.1117/12.837217

J. Yu, Chiao-Yang Cheng, Yoou-Bin Guo, F. Hong

{"title":"Fabrication of diamond and diamond-like carbon molds for nano-imprinting lithography","authors":"J. Yu, Chiao-Yang Cheng, Yoou-Bin Guo, F. Hong","doi":"10.1117/12.837217","DOIUrl":"https://doi.org/10.1117/12.837217","url":null,"abstract":"Micro- and nano-scale molds were fabricated using nanocrystalline diamond (nano-diamond) and diamond-like carbon (DLC) films for imprinting lithography. Patterning was first transferred to the resist on nano-diamond and DLC thin films by photolithography and imprint lithography methods, and then deep etching with inductively-coupled plasma reactive ion etching (ICP-RIE) was applied to transfer patterns to nano-diamond and DLC films for the fabrication of diamond molds. Nano-diamond films of about 1.5μm in thickness were deposited on silicon substrates by hot filament chemical vapor deposition (HFCVD) by controlling CH4/H2 ratios and substrate temperatures. Thick diamond-like carbon films containing silicon oxide nanoparticles were deposited on silicon substrates by PECVD using gaseous HMDSO (Hexamethyldisiloxane) reactants to release the film stress. E-beam writer was used to pattern the resist on the Cr film-covered thick DLC film. By using ICP-RIE, Cr film was first patterned with the patterned e-beam resist as the etching mask, and then DLC thick film was etched to form nanoimprint mold using the patterned Cr as the etching mask. High fidelity nano-patterns were transferred with nano-imprinting lithography using the nano-diamond and DLC molds. Good mold releasing behavior and high mold strength were observed for the nanocrystalline diamond and DLC molds due to their highly hydrophobic surface and high toughness, respectively.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115383964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Spontaneous deformation of resist micro pattern due to van der Waals interaction 范德华相互作用引起的抗蚀微图案的自发变形

Lithography Asia Pub Date : 2009-12-14 DOI: 10.1117/12.841117

A. Kawai, T. Yamaji

引用次数: 0

Dissolved gas quantification and bubble formation in liquid chemical dispense 液体化学剂中溶解气体的定量和气泡的形成

Lithography Asia Pub Date : 2009-12-14 DOI: 10.1117/12.852209

G. Tom, Wei Liu

引用次数: 1

Possible line edge roughness reduction by anisotropic molecular resist 各向异性分子抗蚀剂可能降低线边缘粗糙度

Lithography Asia Pub Date : 2009-12-12 DOI: 10.1117/12.837234

Hyunsu Kim, In Wook Cho, Hakjin Jang, Mihwa Kang, Seong W. Kim, Hye-keun Oh

引用次数: 1

Development of silicon glass for etch reverse layer (SiGERL) materials and BARCs for double patterning process 用于蚀刻反向层(sigl)材料的硅玻璃和用于双图案工艺的BARCs的开发

Lithography Asia Pub Date : 2009-12-11 DOI: 10.1117/12.837157

Yasushi Sakaida, H. Yaguchi, Rikimaru Sakamoto, B. Ho

{"title":"Development of silicon glass for etch reverse layer (SiGERL) materials and BARCs for double patterning process","authors":"Yasushi Sakaida, H. Yaguchi, Rikimaru Sakamoto, B. Ho","doi":"10.1117/12.837157","DOIUrl":"https://doi.org/10.1117/12.837157","url":null,"abstract":"Materials and processes for double patterning using 193nm immersion lithography has been developed for the 32/22 nm node device generations. As for double patterning , some patterning methods have already been reported. For instance, there are LELE (Litho Etch Litho Etch) process and LFLE (Litho Freeze Litho Etch) process. LELE process is complicate and low throughput compared to LFLE process. On the other hand, freezing process and freezing material are needed in LFLE process. Then, we examined the process and the material that was able to form a minute pattern without increasing the number of processes as much as possible. The following is examined as a fine hole patterning process. At first, the pillar pattern is obtained by the X-Y double line dipole exposure. Secondly, the reverse material is applied on the pillar pattern and the subsequent process (dry etching or wet etching process) converts the pillar pattern into a hole pattern. We examined the reverse process and materials, including Silicon Glass for Etch Reverse Layer (SiGERL),and organic Bottom-Anti-Reflective coating (BARC) which is adequate for reflectivity control, lithography and the etching process.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125373232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Latest results from the Nikon NSR-S620 double patterning immersion scanner 尼康NSR-S620双图案浸入式扫描仪的最新结果

Lithography Asia Pub Date : 2009-12-11 DOI: 10.1117/12.837037

Kazuhiro Hirano, Yuichi Shibazaki, M. Hamatani, Jun Ishikawa, Y. Iriuchijima

引用次数: 3

Optical critical dimension measurements for patterned media with 10's nm feature size 具有10nm特征尺寸的图案介质的光学临界尺寸测量

Lithography Asia Pub Date : 2009-12-11 DOI: 10.1117/12.839523

Yongdong Liu, M. Tabet, Jiangtao Hu, Zhaoning Yu, J. Hwu, Wei Hu, Sha Zhu, Gene Gauzner, Kim Y. Lee, Shifu Lee

引用次数: 0

Mask defect specification in the spacer patterning process by using a fail-bit-map analysis 通过使用故障位图分析，在间隔图型过程中对掩膜缺陷进行说明

Lithography Asia Pub Date : 2009-12-11 DOI: 10.1117/12.837132

S. Miyoshi, S. Yamaguchi, M. Naka, Keiko Morishita, T. Hirano, Hiroyuki Morinaga, H. Mashita, A. Kobiki, Makoto Kaneko, H. Mukai, Minori Kajimoto, T. Sugihara, Y. Horii, Yoshihiro Yanai, Tadahito Fujisawa, K. Hashimoto, S. Inoue

引用次数: 2

Regularization of inverse photomask synthesis to enhance manufacturability 正则化反掩模合成以提高可制造性

Lithography Asia Pub Date : 2009-12-11 DOI: 10.1117/12.837512

N. Jia, A. Wong, E. Lam

引用次数: 20

Green binary and phase shifting mask 绿色二进制和相移掩模

Lithography Asia Pub Date : 2009-12-03 DOI: 10.1117/12.836228

S. Shy, Chaoyu Hong, Cheng-San Wu, S. J. Chen, Hung-Yu Wu, Y. Ting

{"title":"Green binary and phase shifting mask","authors":"S. Shy, Chaoyu Hong, Cheng-San Wu, S. J. Chen, Hung-Yu Wu, Y. Ting","doi":"10.1117/12.836228","DOIUrl":"https://doi.org/10.1117/12.836228","url":null,"abstract":"SixNy/Ni thin film green mask blanks were developed , and are now going to be used to replace general chromium film used for binary mask as well as to replace molydium silicide embedded material for AttPSM for I-line (365 nm), KrF (248 nm), ArF (193 nm) and Contact/Proximity lithography. A bilayer structure of a 1 nm thick opaque, conductive nickel layer and a SixNy layer is proposed for binary and phase-shifting mask. With the good controlling of plasma CVD of SixNy under silane (50 sccm), ammonia (5 sccm) and nitrogen (100 sccm), the pressure is 250 mTorr. and RF frequency 13.56 MHz and power 50 W. SixNy has enough deposition latitude to meet the requirements as an embedded layer for required phase shift 180 degree, and the T% in 193, 248 and 365 nm can be adjusted between 2% to 20% for binary and phase shifting mask usage. Ni can be deposited by E-gun, its sheet resistance Rs is less than 1.435 kΩ/square. Jeol e-beam system and I-line stepper are used to evaluate these thin film green mask blanks, feature size less than 200 nm half pitch pattern and 0.558 μm pitch contact hole can be printed. Transmission spectrums of various thickness of SixNy film are inspected by using UV spectrometer and FTIR. Optical constants of the SixNy film are measured by n & k meter and surface roughness is inspected by using Atomic Force Microscope (AFM).","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"18 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120845993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1