Lithography Asia最新文献_第10页

Methodology of flare modeling and compensation in EUVL EUVL中耀斑建模与补偿方法

Lithography Asia Pub Date : 2008-12-04 DOI: 10.1117/12.804673

Insung Kim, Hoyoung Kang, Chang-min Park, Joo-on Park, Jeong-Hoon Lee, Jinhong Park, Doohoon Goo, J. Yeo, Seong-woon Choi, W. Han

引用次数: 6

22nm 1:1 line and space patterning by using double patterning and resist reflow process 22nm 1:1线和空间图案，采用双图案和抗回流工艺

Lithography Asia Pub Date : 2008-12-04 DOI: 10.1117/12.804643

Joon-min Park, Jisoo Yoo, Joo-Yoo Hong, I. An, Hye-keun Oh

引用次数: 0

Current benchmarking results of EUV resist at Selete Selete的EUV电阻的当前基准测试结果

Lithography Asia Pub Date : 2008-12-04 DOI: 10.1117/12.804665

D. Kawamura, K. Kaneyama, Shinji Kobayashi, H. Oizumi, T. Itani

引用次数: 13

Process capability comparison between LELE DPT and spacer for NAND flash 32nm and below LELE DPT与32nm及以下NAND闪存spacer的制程性能比较

Lithography Asia Pub Date : 2008-12-04 DOI: 10.1117/12.808003

Shih-en Tseng, A. Chen

{"title":"Process capability comparison between LELE DPT and spacer for NAND flash 32nm and below","authors":"Shih-en Tseng, A. Chen","doi":"10.1117/12.808003","DOIUrl":"https://doi.org/10.1117/12.808003","url":null,"abstract":"This work demonstrates a methodology for evaluating the multiple feature error budget of NAND-Flash Gate layer and investigates the process capability of the Double Patterning Technology (DPT) options, LELE and Spacer, for NAND Flash 32nm and below. Since the effective k1 limit for DPT is near 0.14 for dense 1D features, three types of ASML scanners are potential candidates for imaging such devices: XT:1400, XT:1700i and XT:1900i. We will present the results of a simulation evaluation of the DPT process capability of these scanners for NAND-Flash Gate layer with 32nm and 22nm half pitch. The DPT capability involves not only lithography but also the subsequent patterning steps of the selected process flow. Moreover, the pattern sensitivity to scanner parameter variations increases with further scaling. It is therefore crucial to take into account the reasonable budgets of scanner dose, focus and overlay errors as well as the error budgets of film deposition, etch and mask registration. This work will not only evaluate the LELE DPT and Spacer feasibility for the mentioned scanners but also analyze the main contributors of CDU in DPT processes and indicate directions we may follow to improve.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130314855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Practical requirement for reflectivity control in sub 30nm device using high NA immersion lithography 采用高NA浸没光刻技术的30nm以下器件反射率控制的实际要求

Lithography Asia Pub Date : 2008-12-04 DOI: 10.1117/12.804671

Y. Jang, So-ra Han, Hyoung-hee kim, Jin-young Yoon, Shi-yong Lee, Kwang-sub Yoon, Seok-hwan Oh, Seong-woon Choi, W. Han

{"title":"Practical requirement for reflectivity control in sub 30nm device using high NA immersion lithography","authors":"Y. Jang, So-ra Han, Hyoung-hee kim, Jin-young Yoon, Shi-yong Lee, Kwang-sub Yoon, Seok-hwan Oh, Seong-woon Choi, W. Han","doi":"10.1117/12.804671","DOIUrl":"https://doi.org/10.1117/12.804671","url":null,"abstract":"Reflectivity comparison study of bottom anti reflectivity coating (BARC) was investigated at 30nm node devices with same gate width at different pitch sizes. The goal of this study is to elucidate the practical target of reflectivity for high NA immersion lithography especially focusing on the changes in the CD variation. Using double patterning technology (DPT) and single patterning technology (SPT) patterns in high NA systems, we studied the impact of reflectivity to the lithography performance for various ARC thicknesses. A strong dependence of n, k values (of BARC and substrate) on reflectivity was confirmed by simulation. Standing wave effects were investigated by vertical profiles inspection and changes in lithographic performances. Finally, we investigated the critical dimension uniformity (CDU), and line width roughness (LWR) variations for various reflectivities using hard mask substrates. Our experimental and simulation results clearly show that a 0.1% reflectivity target is highly recommendable for the sub-30 nm device process using high NA immersion lithography.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"7140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129148311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Model based pattern matching 基于模型的模式匹配

Lithography Asia Pub Date : 2008-12-04 DOI: 10.1117/12.810062

L. Melvin, Josh Tuttle, Mathias Boman

{"title":"Model based pattern matching","authors":"L. Melvin, Josh Tuttle, Mathias Boman","doi":"10.1117/12.810062","DOIUrl":"https://doi.org/10.1117/12.810062","url":null,"abstract":"An important need in the Optical Proximity Correction (OPC) process is to be able to identify problem correction areas. However, many times when a problem correction area is identified, multiple instances of the same problem occur throughout the correction. This can lead to potentially hundreds or thousands of repeated structures that must be filtered by the development engineer. In some instances, hundreds of thousands of problem areas may be identified, but in reality, all the areas are the same lithographic pattern. One way of identifying repeated patterns in an analysis data base is to use Boolean geometric logic to isolate matching patterns. The problem with this approach is determining what area is the area of process influence. This invariably leads to a conservative analysis of similar patterns, which leads to many repeated failures that are actually the same failure. This study will discuss a solution to this problem using process models and process model approximations to determine if patterns are the same from the point of view of the process. This will be accomplished using the output model intensity, the output model slope, and the pattern response to focus variation. When these three values are the same, it is hypothesized the layout patterns are the same from a process point of view. In addition, the study will discuss methodologies to speed up the model analysis and adjust accuracy and sensitivity.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126714001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimizing integrated optical CD monitoring by floating pre-process variations in a complex multi-layer structure 复杂多层结构中浮动预处理变化优化集成光学光盘监测

Lithography Asia Pub Date : 2008-12-01 DOI: 10.1117/12.804636

M. Strobl, Lisa Huang, A. Li, Ying Luo, Y. Wen

引用次数: 3

Development of photosensitive silsesquioxane 光敏硅氧烷的研制

Lithography Asia Pub Date : 2008-11-20 DOI: 10.1117/12.804669

Y. Tashiro, Takeshi Sekito, T. Iwata, Daishi Yokoyama, T. Nonaka

引用次数: 3

Reactive liquid crystal materials for optically anisotropic patterned retarders 光学各向异性图案缓速器用反应性液晶材料

Lithography Asia Pub Date : 2008-11-20 DOI: 10.1117/12.805378

R. Harding, Iain Gardiner, H. Yoon, T. Perrett, O. Parri, K. Skjonnemand

{"title":"Reactive liquid crystal materials for optically anisotropic patterned retarders","authors":"R. Harding, Iain Gardiner, H. Yoon, T. Perrett, O. Parri, K. Skjonnemand","doi":"10.1117/12.805378","DOIUrl":"https://doi.org/10.1117/12.805378","url":null,"abstract":"Merck has developed a range of reactive liquid crystal materials (Reactive Mesogens) that are designed to form thin, birefringent, coatable films for optical applications. Reactive Mesogen (RM) films are typically coated from solution and polymerized in-situ to form thin, optics-grade coatings. Merck RM materials are customized formulations including reactive liquid crystals, surfactants, photoinitiators and other proprietary additives. Merck have optimized the materials to achieve the optimum physical performance in each application. In this paper we focus on the optimization of RM materials to achieve the finest patterning resolution and defined feature shape whilst maintaining good physical properties of the films. Several conventional trade-offs are investigated and circumvented using novel material concepts. Different methods of patterning RM materials are discussed and the merits of each considered. Thermal annealing of non-polymerized regions can create isotropic islands within the polymerized anisotropic matrix. Alternatively, the non polymerized material can be re-dissolved in the coating solvent and rinsed away. Each of these techniques has benefits depending on the processing conditions and these are discussed in depth.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115773723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Grazing incidence ion beams for reducing LER 掠入射离子束用于降低LER

Lithography Asia Pub Date : 2008-11-20 DOI: 10.1117/12.804692

C. Struck, M. Neumann, R. Raju, R. Bristol, D. Ruzic

引用次数: 4