D. Kawamura, K. Kaneyama, Shinji Kobayashi, H. Oizumi, T. Itani
{"title":"Selete的EUV电阻的当前基准测试结果","authors":"D. Kawamura, K. Kaneyama, Shinji Kobayashi, H. Oizumi, T. Itani","doi":"10.1117/12.804665","DOIUrl":null,"url":null,"abstract":"The main challenge facing the implementation of EUV resist and processing has been concurrent achievement of high sensitivity, high resolution, and low line width roughness (LWR). In order to improve the performance of EUV resist, Selete is actively pursuing its benchmarking. The results from this benchmarking were found to be as follows: Esize improved with the increasing capability of EUV pattern exposure. Sensitivity improved during this year. Resolution is found to be almost sufficient for 32-nm half-pitch (hp), but not quite good enough for 22-nm hp. Resist blur of the resist, which marked good score in benchmarking, is found to be 10nm to 11nm. LWR is still far from its target value.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"354 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Current benchmarking results of EUV resist at Selete\",\"authors\":\"D. Kawamura, K. Kaneyama, Shinji Kobayashi, H. Oizumi, T. Itani\",\"doi\":\"10.1117/12.804665\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The main challenge facing the implementation of EUV resist and processing has been concurrent achievement of high sensitivity, high resolution, and low line width roughness (LWR). In order to improve the performance of EUV resist, Selete is actively pursuing its benchmarking. The results from this benchmarking were found to be as follows: Esize improved with the increasing capability of EUV pattern exposure. Sensitivity improved during this year. Resolution is found to be almost sufficient for 32-nm half-pitch (hp), but not quite good enough for 22-nm hp. Resist blur of the resist, which marked good score in benchmarking, is found to be 10nm to 11nm. LWR is still far from its target value.\",\"PeriodicalId\":383504,\"journal\":{\"name\":\"Lithography Asia\",\"volume\":\"354 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Lithography Asia\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.804665\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Lithography Asia","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.804665","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Current benchmarking results of EUV resist at Selete
The main challenge facing the implementation of EUV resist and processing has been concurrent achievement of high sensitivity, high resolution, and low line width roughness (LWR). In order to improve the performance of EUV resist, Selete is actively pursuing its benchmarking. The results from this benchmarking were found to be as follows: Esize improved with the increasing capability of EUV pattern exposure. Sensitivity improved during this year. Resolution is found to be almost sufficient for 32-nm half-pitch (hp), but not quite good enough for 22-nm hp. Resist blur of the resist, which marked good score in benchmarking, is found to be 10nm to 11nm. LWR is still far from its target value.
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