{"title":"复杂多层结构中浮动预处理变化优化集成光学光盘监测","authors":"M. Strobl, Lisa Huang, A. Li, Ying Luo, Y. Wen","doi":"10.1117/12.804636","DOIUrl":null,"url":null,"abstract":"Historically, in a volume production environment, process induced variation in optical property (n&k) of film stack was not significant for the most of applications using scatterometry. Many papers presented before addressed the CD variation in the production by adopting the fixed optical property approach [1-8]. However, with shrinkage of device size, and introduction of new material and process, n&k variation of some critical layers can not be ignored. In this paper, it presents impacts on measured optical CD due to n&k variation of one critical film in a 70nm DRAM ArF lithography process at a patterned area (A-layer). A solution to minimize the impacts using floating n&k in the scatterometry model is discussed, developed and verified.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Optimizing integrated optical CD monitoring by floating pre-process variations in a complex multi-layer structure\",\"authors\":\"M. Strobl, Lisa Huang, A. Li, Ying Luo, Y. Wen\",\"doi\":\"10.1117/12.804636\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Historically, in a volume production environment, process induced variation in optical property (n&k) of film stack was not significant for the most of applications using scatterometry. Many papers presented before addressed the CD variation in the production by adopting the fixed optical property approach [1-8]. However, with shrinkage of device size, and introduction of new material and process, n&k variation of some critical layers can not be ignored. In this paper, it presents impacts on measured optical CD due to n&k variation of one critical film in a 70nm DRAM ArF lithography process at a patterned area (A-layer). A solution to minimize the impacts using floating n&k in the scatterometry model is discussed, developed and verified.\",\"PeriodicalId\":383504,\"journal\":{\"name\":\"Lithography Asia\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Lithography Asia\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.804636\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Lithography Asia","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.804636","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
摘要
从历史上看,在批量生产环境中,对于大多数使用散射测量的应用来说,工艺引起的膜堆光学性质(n&k)变化并不显著。之前的许多论文通过采用固定光学性质方法来解决生产中的CD变化[1-8]。然而,随着器件尺寸的缩小,以及新材料和新工艺的引入,一些关键层的n&k变化是不可忽视的。本文介绍了70nm DRAM ArF光刻工艺中一个关键膜的n&k变化对测量光学CD的影响。讨论、开发并验证了在散射测量模型中使用浮动n&k最小化影响的解决方案。
Optimizing integrated optical CD monitoring by floating pre-process variations in a complex multi-layer structure
Historically, in a volume production environment, process induced variation in optical property (n&k) of film stack was not significant for the most of applications using scatterometry. Many papers presented before addressed the CD variation in the production by adopting the fixed optical property approach [1-8]. However, with shrinkage of device size, and introduction of new material and process, n&k variation of some critical layers can not be ignored. In this paper, it presents impacts on measured optical CD due to n&k variation of one critical film in a 70nm DRAM ArF lithography process at a patterned area (A-layer). A solution to minimize the impacts using floating n&k in the scatterometry model is discussed, developed and verified.