范德华相互作用引起的抗蚀微图案的自发变形

Lithography Asia Pub Date : 2009-12-14 DOI:10.1117/12.841117
A. Kawai, T. Yamaji
{"title":"范德华相互作用引起的抗蚀微图案的自发变形","authors":"A. Kawai, T. Yamaji","doi":"10.1117/12.841117","DOIUrl":null,"url":null,"abstract":"Deformation and stress distribution of ultra thin resist pattern are estimated by finite element method (FEM) from the measurement values of van der Waals (vdW) force and mechanical properties of resist material. In this simulation, strain and stress distribution in the simple model of the resist pattern are obtained. These results show that the thin resist pattern has high sensitivity to weak vdW force. And, the stress concentrates at an interface between the resist pattern and the substrate. The stress concentration point in the resist pattern would be destructed due to the weak force. In the experiment, the vdW attractive force is measured with an atomic force microscope (AFM) system. The maximum value of the attractive force is about 180nN. The error of the force measurement is prevented to be lower because the no torsion of the cantilever can be observed when the tip is approaching to the thin film resist surface. It is possible to discuss the realization of a soft micro chamber wall made of a soft material such as the cell.","PeriodicalId":383504,"journal":{"name":"Lithography Asia","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Spontaneous deformation of resist micro pattern due to van der Waals interaction\",\"authors\":\"A. Kawai, T. Yamaji\",\"doi\":\"10.1117/12.841117\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Deformation and stress distribution of ultra thin resist pattern are estimated by finite element method (FEM) from the measurement values of van der Waals (vdW) force and mechanical properties of resist material. In this simulation, strain and stress distribution in the simple model of the resist pattern are obtained. These results show that the thin resist pattern has high sensitivity to weak vdW force. And, the stress concentrates at an interface between the resist pattern and the substrate. The stress concentration point in the resist pattern would be destructed due to the weak force. In the experiment, the vdW attractive force is measured with an atomic force microscope (AFM) system. The maximum value of the attractive force is about 180nN. The error of the force measurement is prevented to be lower because the no torsion of the cantilever can be observed when the tip is approaching to the thin film resist surface. It is possible to discuss the realization of a soft micro chamber wall made of a soft material such as the cell.\",\"PeriodicalId\":383504,\"journal\":{\"name\":\"Lithography Asia\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Lithography Asia\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.841117\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Lithography Asia","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.841117","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

利用范德华力(vdW)测量值和抗蚀剂材料的力学性能,采用有限元法估计了超薄抗蚀剂图案的变形和应力分布。在此模拟中,得到了电阻模式简单模型中的应变和应力分布。结果表明,薄阻片对弱vdW力具有较高的灵敏度。应力集中在抗蚀剂图案与衬底之间的界面处。在弱力作用下,抗蚀图样中的应力集中点会发生破坏。在实验中,用原子力显微镜(AFM)系统测量了vdW的引力。引力的最大值约为180nN。由于在尖端接近薄膜电阻表面时不能观察到悬臂梁的扭转,从而防止了力测量的误差降低。有可能讨论由诸如细胞之类的软材料制成的软微室壁的实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Spontaneous deformation of resist micro pattern due to van der Waals interaction
Deformation and stress distribution of ultra thin resist pattern are estimated by finite element method (FEM) from the measurement values of van der Waals (vdW) force and mechanical properties of resist material. In this simulation, strain and stress distribution in the simple model of the resist pattern are obtained. These results show that the thin resist pattern has high sensitivity to weak vdW force. And, the stress concentrates at an interface between the resist pattern and the substrate. The stress concentration point in the resist pattern would be destructed due to the weak force. In the experiment, the vdW attractive force is measured with an atomic force microscope (AFM) system. The maximum value of the attractive force is about 180nN. The error of the force measurement is prevented to be lower because the no torsion of the cantilever can be observed when the tip is approaching to the thin film resist surface. It is possible to discuss the realization of a soft micro chamber wall made of a soft material such as the cell.
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