Victor Shih, Jacky Huang, Willie Wang, G. Huang, H. Chung, A. Ho, W. Yang, Sophia Wang, C. Ke, L. J. Chen, C. Liang, H. H. Liu, H. J. Lee, L. G. Terng, T. Gau, John C. Lin, K. Bhattacharyya, M. van der Schaar, N. Wright, M. Shahrjerdy, V. Wang, Spencer Lin, Jon Wu, S. Peng, Dennis Chang, Cathy Wang, A. Fuchs, O. Adam, Karel van der Mast
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A sophisticated metrology solution for advanced lithography: addressing the most stringent needs of today as well as future lithography
Advanced lithography is becoming increasingly demanding when speed and sophistication in communication between litho and metrology (feedback control) are most crucial. Overall requirements are so extreme that all measures must be taken in order to meet them. This is directly driving the metrology resolution, precision and matching needs in to deep sub-nanometer level [4]. Keeping the above in mind, a new scatterometry-based platform is under development at ASML. Authors have already published results of a thorough investigation of this promising new metrology technique which showed excellent results on resolution, precision and matching for overlay, as well as basic and advanced capabilities for CD [1], [2], [3]. In this technical presentation the authors will report the newest results from this ASML platform. This new work was divided in two sections: monitor wafer applications (scanner control - overlay, CD and focus) and product wafer applications.
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