A sophisticated metrology solution for advanced lithography: addressing the most stringent needs of today as well as future lithography

Lithography Asia Pub Date : 2009-12-03 DOI:10.1117/12.837353

Victor Shih, Jacky Huang, Willie Wang, G. Huang, H. Chung, A. Ho, W. Yang, Sophia Wang, C. Ke, L. J. Chen, C. Liang, H. H. Liu, H. J. Lee, L. G. Terng, T. Gau, John C. Lin, K. Bhattacharyya, M. van der Schaar, N. Wright, M. Shahrjerdy, V. Wang, Spencer Lin, Jon Wu, S. Peng, Dennis Chang, Cathy Wang, A. Fuchs, O. Adam, Karel van der Mast

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引用次数: 10

Abstract

Advanced lithography is becoming increasingly demanding when speed and sophistication in communication between litho and metrology (feedback control) are most crucial. Overall requirements are so extreme that all measures must be taken in order to meet them. This is directly driving the metrology resolution, precision and matching needs in to deep sub-nanometer level [4]. Keeping the above in mind, a new scatterometry-based platform is under development at ASML. Authors have already published results of a thorough investigation of this promising new metrology technique which showed excellent results on resolution, precision and matching for overlay, as well as basic and advanced capabilities for CD [1], [2], [3]. In this technical presentation the authors will report the newest results from this ASML platform. This new work was divided in two sections: monitor wafer applications (scanner control - overlay, CD and focus) and product wafer applications.

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先进光刻技术的精密计量解决方案:满足当今以及未来光刻技术最严格的需求

当光刻和测量(反馈控制)之间的通信速度和复杂性最关键时，先进的光刻技术变得越来越高。总的要求是如此极端，必须采取一切措施来满足这些要求。这直接推动计量分辨率、精度和匹配需求向亚纳米深度发展[4]。考虑到上述情况，ASML正在开发一个新的基于散射测量的平台。作者已经发表了对这一有前途的新计量技术的深入研究结果，该技术在覆盖层的分辨率、精度和匹配以及CD的基本和高级能力方面取得了出色的成果[1]，[2]，[3]。在这个技术演示中，作者将报告来自这个ASML平台的最新结果。这项新工作分为两个部分:监控晶圆应用(扫描仪控制-覆盖，CD和聚焦)和产品晶圆应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Lithography Asia

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