Abbe-PCA- smo:基于Abbe-PCA的微光刻源和掩模优化

Lithography Asia Pub Date : 2009-12-03 DOI:10.1117/12.837686
Shi-Jei Chang, C. C. Chen, L. Melvin
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引用次数: 8

摘要

源掩模同步优化(SMO)已被证明是提高微光刻航空成像质量的有效方法。然而,由于当前光学接近校正(OPC)的运行时间已经很长,计算复杂度的增加也很严重。在本文中,我们证明了SMO可以在我们之前提出的Abbe-PCA方法框架中有效地完成。与Hopkins方法不同,Abbe- pca直接对Abbe源进行特征分解。在这个框架中,修改源代码是简单而有效的。实验结果表明,该方法的运行时间提高了10倍以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Abbe-PCA-SMO: microlithography source and mask optimization based on Abbe-PCA
Simultaneous source and mask optimization (SMO) has been shown to be an effective method to improve the quality of microlithography aerial imaging. However, the increasing computational complexity is also serious given that current optical proximity correction (OPC) runtime has already been very long. In this paper, we show that SMO can be done efficiently in our previous proposed Abbe-PCA method framework. Different from the Hopkins method, Abbe-PCA directly perform eigen-decomposition on the Abbe sources. In this framework, source modification is easy and efficient. Experimental results show that more than 10X runtime improvement is observed.
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