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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)最新文献

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Germanium-lead alloy with 0.3% substitutional lead formed by pulsed laser induced epitaxy 脉冲激光诱导外延制备了含0.3%替代铅的锗铅合金
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874665
Qian Zhou, Chunlei Zhan, X. Gong, T. Chan, T. Osipowicz, Sin Leng Lim, E. Tok, Y. Yeo
{"title":"Germanium-lead alloy with 0.3% substitutional lead formed by pulsed laser induced epitaxy","authors":"Qian Zhou, Chunlei Zhan, X. Gong, T. Chan, T. Osipowicz, Sin Leng Lim, E. Tok, Y. Yeo","doi":"10.1109/ISTDM.2014.6874665","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874665","url":null,"abstract":"For the first time, single crystalline GePb was formed using sputtering and laser induced epitaxy. The GePb alloy shows a good crystalline quality without Pb precipitation or clustering. No dislocation is observed at the interface between GePb and Ge. HRBS data indicates that substitutional Pb content of ~0.3% was obtained.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116563167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of DC sputtering conditions on formation of Ge layers on Si substrates by sputter epitaxy method 直流溅射条件对溅射外延法在Si衬底上形成Ge层的影响
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874675
T. Tsukamoto, N. Hirose, A. Kasamatsu, T. Mimura, T. Matsui, Y. Suda
{"title":"Effects of DC sputtering conditions on formation of Ge layers on Si substrates by sputter epitaxy method","authors":"T. Tsukamoto, N. Hirose, A. Kasamatsu, T. Mimura, T. Matsui, Y. Suda","doi":"10.1109/ISTDM.2014.6874675","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874675","url":null,"abstract":"The formation of Ge layers on the Si (001) substrates with 3.5 Ω cm resistivity by sputter epitaxy method has been investigated. Flat Ge layers on the Si substrates are obtained by adjusting the DC sputtering conditions. High DC power sputtering modifies the surface morphology and leads to the formation of flat Ge layers.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"48 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114059247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Germanium lasers for the near and mid IR 锗激光器用于近红外和中红外
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874659
J. Michel, Yan Cai, Zhaohong Han, Lin Zhang, Wei Yu, L. Kimerling
{"title":"Germanium lasers for the near and mid IR","authors":"J. Michel, Yan Cai, Zhaohong Han, Lin Zhang, Wei Yu, L. Kimerling","doi":"10.1109/ISTDM.2014.6874659","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874659","url":null,"abstract":"Ge lasers, monolithically integrated on a Si CMOS platform, offer great potential for future on-chip photonic systems. In addition, the wide gain spectrum opens the possibility for inexpensive tunable lasers in the near- and mid-IR.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134011530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chlorine- and Fluorine-based dry etching of Germanium-Tin 锗锡的氯基和氟基干法蚀刻
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874686
Yuan Dong, D. Lei, Xinran Xu, Wei Wang, Y. Yeo
{"title":"Chlorine- and Fluorine-based dry etching of Germanium-Tin","authors":"Yuan Dong, D. Lei, Xinran Xu, Wei Wang, Y. Yeo","doi":"10.1109/ISTDM.2014.6874686","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874686","url":null,"abstract":"Cl- and F- based dry etching of Ge<sub>1-x</sub>Sn<sub>x</sub> were presented in this work. High selectivity of Ge<sub>1-x</sub>Sn<sub>x</sub> over Ge can be achieved by F-based dry etching. This is caused by the formation of a thin nonvolatile SnF<sub>x</sub> layer at Ge<sub>1-x</sub>Sn<sub>x</sub> surface. Addition of O<sub>2</sub> to CF<sub>4</sub> can enhance the selectivity of F-based dry etching, but with an increase of surface roughness of Ge<sub>1-x</sub>Sn<sub>x</sub> samples.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121704061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Atomically controlled heteroepitaxy of Ge on a ferromagnetic heusler alloy for a vertical-type spin transistor 垂直型自旋晶体管中锗在铁磁赫斯勒合金上的原子控制异质外延
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874656
S. Yamada, M. Miyao, K. Hamaya
{"title":"Atomically controlled heteroepitaxy of Ge on a ferromagnetic heusler alloy for a vertical-type spin transistor","authors":"S. Yamada, M. Miyao, K. Hamaya","doi":"10.1109/ISTDM.2014.6874656","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874656","url":null,"abstract":"Using molecular beam epitaxy (MBE) techniques, we developed a growth technique of epitaxial Ge layers on a ferromagnetic alloy, Fe3Si. As a result, we demonstrated a basic structure of a vertical-type Ge-channel spin transistor on a Si platform.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120883952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications 用于单光子雪崩二极管的厚锗硅结构外延生长的优化
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874639
P. Allred, M. Myronov, S. Rhead, R. Warburton, G. Intermite, G. Buller, D. Leadley
{"title":"Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications","authors":"P. Allred, M. Myronov, S. Rhead, R. Warburton, G. Intermite, G. Buller, D. Leadley","doi":"10.1109/ISTDM.2014.6874639","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874639","url":null,"abstract":"SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124398810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High electron mobility n-channel Ge MOSFETs with sub-nm EOT 具有亚纳米EOT的高电子迁移率n沟道Ge mosfet
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874697
A. Toriumi, C. Lee, Cimang Lu, T. Nishimura
{"title":"High electron mobility n-channel Ge MOSFETs with sub-nm EOT","authors":"A. Toriumi, C. Lee, Cimang Lu, T. Nishimura","doi":"10.1109/ISTDM.2014.6874697","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874697","url":null,"abstract":"Poor electron mobility in n-channel Ge FETs is not intrinsic. We can engineer the Ge interface through understanding of thermodynamics in gate stack formation and of kinetics of both surface planarization and oxidation. Thus, Ge FETs are quite promising not only in p-channel but also in n-channel FETs.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128357613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Strained germanium nanowire MOSFETs 应变锗纳米线mosfet
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874704
K. Ikeda, Y. Kamimuta, Y. Moriyama, M. Ono, M. Oda, T. Irisawa, T. Tezuka
{"title":"Strained germanium nanowire MOSFETs","authors":"K. Ikeda, Y. Kamimuta, Y. Moriyama, M. Ono, M. Oda, T. Irisawa, T. Tezuka","doi":"10.1109/ISTDM.2014.6874704","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874704","url":null,"abstract":"Ge nanowire MOSFETs with a uniaxial compressive strain as high as 3.9% were demonstrated by 2-step Ge-condensation technique. Record high hole mobility (μ<sub>eff</sub> = 1922 cm[su2}/Vs) and record-low off-current (2.7×10<sup>-</sup>9A/μm at V<sub>d</sub> = -0.5 V) were achieved among scaled (sub-100nm L<sub>g</sub>) Ge MOSFET for the device with the L<sub>g</sub> of 45nm. These results indicate that strained-Ge channels have a potential to serve as pFET channel of scaled future CMOS.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129241640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-temperature Grown Ge1−xSnx layers on a metallic silicide 金属硅化物上低温生长的Ge1−xSnx层
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874632
M. Kawano, S. Yamada, M. Miyao, K. Hamaya
{"title":"Low-temperature Grown Ge1−xSnx layers on a metallic silicide","authors":"M. Kawano, S. Yamada, M. Miyao, K. Hamaya","doi":"10.1109/ISTDM.2014.6874632","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874632","url":null,"abstract":"We have demonstrated epitaxial growth of Ge<sub>1-x</sub>Sn<sub>x</sub> layers on Fe<sub>3</sub>Si by low-temperature MBE. We believe that this technique can be applicable to the growth of Ge<sub>1-x</sub>Sn<sub>x</sub> on various ferromagnetic metallic templates toward high-performance spin-based MOSFETs.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129129563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth temperature effects on graded InxAl1−xAs/GaAs buffer for metamorphic In0.70Ga0.30As/In0.53Al0.47As planar transistor on Ge-on-insulator(GeOI) substrate gei基板上变质In0.70Ga0.30As/In0.53Al0.47As平面晶体管梯度InxAl1−xAs/GaAs缓冲器生长温度的影响
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874626
S. Wicaksono, K. Tan, W. Loke, S. Yoon, Ivana, S. Subramanian, M. Owen, Y. Yeo
{"title":"Growth temperature effects on graded InxAl1−xAs/GaAs buffer for metamorphic In0.70Ga0.30As/In0.53Al0.47As planar transistor on Ge-on-insulator(GeOI) substrate","authors":"S. Wicaksono, K. Tan, W. Loke, S. Yoon, Ivana, S. Subramanian, M. Owen, Y. Yeo","doi":"10.1109/ISTDM.2014.6874626","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874626","url":null,"abstract":"This paper aims to investigate the effect of substrate temperature on molecular beam epitaxy-grown InxAl1-xAs graded buffer layer. Atomic force microscopy, cross-sectional transmission electron microscopy, and secondary ion mass spectroscopy are used for wafer characterization. TEM images are used to estimate the threading dislocation density in the wafer. To demonstrate the feasibility of this growth method for device integration, HEMT and HBT are also fabricated.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"448 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115958055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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