垂直型自旋晶体管中锗在铁磁赫斯勒合金上的原子控制异质外延

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874656

S. Yamada, M. Miyao, K. Hamaya

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引用次数: 0

摘要

利用分子束外延(MBE)技术，我们开发了一种在铁磁合金Fe3Si上外延锗层的生长技术。因此，我们在Si平台上展示了垂直型ge沟道自旋晶体管的基本结构。

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Atomically controlled heteroepitaxy of Ge on a ferromagnetic heusler alloy for a vertical-type spin transistor

Using molecular beam epitaxy (MBE) techniques, we developed a growth technique of epitaxial Ge layers on a ferromagnetic alloy, Fe3Si. As a result, we demonstrated a basic structure of a vertical-type Ge-channel spin transistor on a Si platform.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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