Strained germanium nanowire MOSFETs

Abstract

Ge nanowire MOSFETs with a uniaxial compressive strain as high as 3.9% were demonstrated by 2-step Ge-condensation technique. Record high hole mobility (μ_eff = 1922 cm[su2}/Vs) and record-low off-current (2.7×10^-9A/μm at V_d = -0.5 V) were achieved among scaled (sub-100nm L_g) Ge MOSFET for the device with the L_g of 45nm. These results indicate that strained-Ge channels have a potential to serve as pFET channel of scaled future CMOS.