发布求助
文献互助 智能选刊 最新文献

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)最新文献

筛选
英文 中文
Study of Si-based Ge heteroepitaxy using RPCVD 硅基锗异质外延的RPCVD研究
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874631
Lei Yao, R. Liang, Chunsheng Jiang, Jing Wang, Jun Xu
{"title":"Study of Si-based Ge heteroepitaxy using RPCVD","authors":"Lei Yao, R. Liang, Chunsheng Jiang, Jing Wang, Jun Xu","doi":"10.1109/ISTDM.2014.6874631","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874631","url":null,"abstract":"It is demonstrated that Ge epilayers with high quantity, low defect density and smooth surface were achieved using cycle method. In addition, the epitaxy of GaAs on the Ge epilayer/Si substrate is also prepared.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114513518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth of tensile-strained Ge layer and highly strain-relaxed Ge1−xSnx buffer layer on silicon by molecular beam epitaxy 用分子束外延在硅表面生长拉伸应变的Ge层和高度应变松弛的Ge1−xSnx缓冲层
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874669
Wei Wang, E. Tok, Y. Yeo
{"title":"Growth of tensile-strained Ge layer and highly strain-relaxed Ge1−xSnx buffer layer on silicon by molecular beam epitaxy","authors":"Wei Wang, E. Tok, Y. Yeo","doi":"10.1109/ISTDM.2014.6874669","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874669","url":null,"abstract":"Highly strain-relaxed Ge<sub>1-x</sub>Sn<sub>x</sub> layers were grown directly on Si(100) by MBE firstly. XRD and AFM measurements demonstrate a good crystalline quality and a relatively flat surface. Ge with 0.82% tensile strain were grown on the Ge<sub>0.895</sub>Sn<sub>0.105</sub>/Si, and the tensile-strain value decreases with increasing thickness of Ge epilayers.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125784774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vertical Ge heterojunction gate-ail-around Tunneling Field Effect Transistors with Ge0.92Sn0.08-δ-Layers at the tunneling junction 隧道结处具有Ge0.92Sn0.08-δ-层的垂直Ge异质结gate-ail-around隧道场效应晶体管
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874652
J. Schulze, A. Blech, I. Fischer, D. Hahnel, Sandra Naasz, Eva-Maria Tropper
{"title":"Vertical Ge heterojunction gate-ail-around Tunneling Field Effect Transistors with Ge0.92Sn0.08-δ-Layers at the tunneling junction","authors":"J. Schulze, A. Blech, I. Fischer, D. Hahnel, Sandra Naasz, Eva-Maria Tropper","doi":"10.1109/ISTDM.2014.6874652","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874652","url":null,"abstract":"We presented first results on the fabrication and characterization of vertical Ge heterojunction GAA-TFETs with a Ge<sub>0.92</sub>Sn<sub>0.08</sub>-δ-layer at the tunneling junction with transistor body diameters from 10 μm down to 250 nm (pillar geometry).","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124116891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Resonant photoluminescence from Ge microdisks on Ge-on-insulator 绝缘体上锗微盘的共振光致发光
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874670
Xuejun Xu, K. Nishida, K. Sawano, T. Maruizumi, Y. Shiraki
{"title":"Resonant photoluminescence from Ge microdisks on Ge-on-insulator","authors":"Xuejun Xu, K. Nishida, K. Sawano, T. Maruizumi, Y. Shiraki","doi":"10.1109/ISTDM.2014.6874670","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874670","url":null,"abstract":"Well-resolved resonant PL peaks were observed from microdisks fabricated on heavily n-doped GOI. FSR and Q-factor confirmed that these peaks corresponded to the WGMs of microdisk. Q-factors didn't decrease against pump power, indicating the onset of population inversion. Our results show that GOI is a promising platform to realize lasers.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125458782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Ge n+/p junctions using temperature-based phosphorous implantation 基于温度的磷注入的Ge n+/p结
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874651
P. Bhatt, P. Swarnkar, A. Misra, J. Biswas, S. Lodha
{"title":"Ge n+/p junctions using temperature-based phosphorous implantation","authors":"P. Bhatt, P. Swarnkar, A. Misra, J. Biswas, S. Lodha","doi":"10.1109/ISTDM.2014.6874651","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874651","url":null,"abstract":"This work compares the impact of implantation temperature ranging from cryogenic (-100 °C) to hot (400°C) on the performance of n+/p Ge junctions. Cryogenic implantation on bulk, planar Ge followed by a 400°C rapid thermal anneal leads to higher activation. lower junction depth, lower sheet resistance and lower junction leakage compared to RT and hot (400°C) implantation. The improved junction performance translates into higher ON current and lower OFF leakage for cryo implanted planar Ge n-MOSFETs. On the other hand, high dose/energy cryogenic implants on Ge fins are shown to degrade fin recrystallization due to the absence of a crystalline core because of increased amorphization. Crystallinity of as-implanted Ge fins indicates that hot implantation could be a more viable n+/p junction formation process for Ge FinFET technology.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131717440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Challenges in epitaxial growth by RP-CVD of strained and relaxed GeSn epilayers on a Si substrate 用RP-CVD在Si衬底上外延生长应变和松弛GeSn薄膜的挑战
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874654
D. Patchett, M. Myronov, S. Rhead, J. Halpin, D. Leadley
{"title":"Challenges in epitaxial growth by RP-CVD of strained and relaxed GeSn epilayers on a Si substrate","authors":"D. Patchett, M. Myronov, S. Rhead, J. Halpin, D. Leadley","doi":"10.1109/ISTDM.2014.6874654","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874654","url":null,"abstract":"High Sn fraction GeSn has been grown by RP-CVD with SnCl4. However, challenges remain in creating device quality material suitable for subsequent growth. Surface segregation of tin, which increases with increased tin fraction, raises doubts about the suitability of GeSn as a platform for subsequent growth. Surface segregation may contribute to difficulties of achieving high growth rates and the growth of alloys with an increased tin fraction. The variability of tin content with depth necessitates the use of specialized compositional characterization such as SIMS. Growth of fully relaxed GeSn epilayers remains elusive, with many grown layers are partially relaxed. However, full relaxation is necessary for a direct bandgap material.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124675373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Use of X-ray techniques in the development and production of novel transistor structures x射线技术在新型晶体管结构开发和生产中的应用
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874676
A. Hikavyy, E. Rosseel, L. Witters, H. Mertens, P. Ryan, R. Langer, R. Loo
{"title":"Use of X-ray techniques in the development and production of novel transistor structures","authors":"A. Hikavyy, E. Rosseel, L. Witters, H. Mertens, P. Ryan, R. Langer, R. Loo","doi":"10.1109/ISTDM.2014.6874676","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874676","url":null,"abstract":"X-ray techniques are indispensable tools for characterization of strained layers during different stages of process development and integration. Even when precise information cannot be obtained in some cases, in combination with other techniques it gives a fast and important feedback.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130785114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors 用二硅烷和三甲基硅烷前驱体RP-CVD生长高碳Si1−xCx涂层
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874653
M. Myronov, S. Rhead, G. Colston, D. Leadley
{"title":"RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors","authors":"M. Myronov, S. Rhead, G. Colston, D. Leadley","doi":"10.1109/ISTDM.2014.6874653","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874653","url":null,"abstract":"We have demonstrated Si1-xCx epilayers growth by RP-CVD and using Disilane and Trimethylsilane precursors. Very high Carbon content, up to 2.4%, has been obtained. It is close to the best results obtained using more expensive precursors. Use of the RP-CVD is vital from an industrial standpoint as, although MBE offers greater control over growth parameters, the RP-CVD is one of the only viable methods of mass epitaxial growth.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133375225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate SiGe虚拟衬底上自组装Ge量子点的应变分布、电子能带结构和光学增益
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874705
S. Bose, W. Fan, C. Jian, D. Zhang, C. Tan
{"title":"Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate","authors":"S. Bose, W. Fan, C. Jian, D. Zhang, C. Tan","doi":"10.1109/ISTDM.2014.6874705","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874705","url":null,"abstract":"In this paper, we study one such possible structure - self assembled Ge QDs embedded on Si0.5Ge0.5 virtual substrate with the same capping layer. A wetting layer is considered to simulate the actual scenario. Then we conduct a theoretical study on the strain and electronic band structure of this model. We employ the valence force field (VFF) method using Keating potential to estimate the strain followed by 8 band k·p method to calculate the electronic band structure taking the Γ valley into consideration. Finally we study the optical gain of the system for varying carrier concentrations.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116809357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improvement of current drive of Ge-nMISFETs by epitaxially grown n+-Ge:P source and drain 外延生长n+-Ge:P源极和漏极对ge - nmisfet电流驱动的改进
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI: 10.1109/ISTDM.2014.6874702
Y. Moriyama, Y. Kamimuta, Y. Kamata, K. Ikeda, S. Takeuchi, Y. Nakamura, A. Sakai, T. Tezuka
{"title":"Improvement of current drive of Ge-nMISFETs by epitaxially grown n+-Ge:P source and drain","authors":"Y. Moriyama, Y. Kamimuta, Y. Kamata, K. Ikeda, S. Takeuchi, Y. Nakamura, A. Sakai, T. Tezuka","doi":"10.1109/ISTDM.2014.6874702","DOIUrl":"https://doi.org/10.1109/ISTDM.2014.6874702","url":null,"abstract":"n<sup>+</sup>-Ge layers with a dopant concentration of 1 × 10<sup>20</sup> cm<sup>-3</sup> and its dopant activation rate as high as 0.7 were obtained by optimizing the growth conditions in LP-CVD. Ti/n<sup>+</sup>-Ge contacts utilizing Ge:P layers with a carrier concentration of 7 × 10<sup>19</sup> cm<sup>-3</sup> exhibit ohmic property in contrast to the P ion-implanted Ge samples with almost the same P concentration and carrier concentration of 2 × 10<sup>19</sup> cm<sup>-3</sup>. Thus, a ρ<sub>c</sub> value as low as 1.2 × 10<sup>-6</sup> Ωcm<sup>2</sup> was obtained for the Ti / Ge:P contact. A low R<sub>sh</sub> of 33 (Ω/sqr.) was shown for the 65-nm-thick P-doped Ge layer due to the high carrier concentration. The value of R<sub>sh</sub> for the epi-layer agrees with the theoretically predicted value, also resulting in reduction of parasitic resistances of the Ge-nMISFETs. The largest I<sub>d</sub> of Ge-nMISFET was obtained by utilizing the Ge:P to elevated S/D region of GeOI-nMISFETs. We can say that these results pave the way to the feasibility of Ge-CMOS.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121740950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信